Related papers: Interfacial dead layer effects on current-voltage …
In this letter, we simulate electronic transport through a metal-ferroelectric-metal tunnel junction by use of a nonequilibrium Green's function approach. We show that quantum effects such as Friedel oscillations lead to deviations from the…
Based on first-principles and model calculations we investigate the effect of polar interfaces on the ferroelectric stability of thin-film ferroelectrics. As a representative model, we consider a TiO2-terminated BaTiO3 film with LaO…
We present the concept of ferroelectric tunnel junctions (FTJs). These junctions consist of two metal electrodes separated by a nanometer-thick ferroelectric barrier. The current-voltage characteristics of FTJs are analyzed under the…
We have carried out calculations of current-voltage characteristics for the electron tunnel current through a junction with a thin insulating ferroelectric barrier assuming that interface transmissions for the left and right interfaces…
By performing first-principles calculations on four capacitor structures based on BaTiO3 and PbTiO3, we determine the intrinsic interfacial effects that are responsible for the destabilization of the polar state in thin-film ferroelectric…
In this paper, a theoretical approach, comprising the non-equilibrium Green's function method for electronic transport and Landau-Khalatnikov equation for electric polarization dynamics, is presented to describe polarization-dependent…
The contribution of a built-in electric field to ferroelectric phase transition in asymmetric ferroelectric tunnel junctions is studied using a multiscale thermodynamic model. It is demonstrated in details that there exists a critical…
By considering an interfacial layer between the electrode and the $BiFeO_{3}$($BFO$) layer, the polarization and the hysteresis behavior of $BFO$ film are simulated. It is found that the non-ferroelectric interface will increase the…
Tunneling electroresistance (TER) effect is the change in the electrical resistance of a ferroelectric tunnel junction (FTJ) associated with polarization reversal in the ferroelectric barrier layer. Here we predict that a FTJ with a…
Based on the structure predicted in a ferroelectric tunnel junction in the resent density functional theory study, we investigate the electron transport through the FTJ with asymmetric interfaces, i.e., one interface dipole is pinned and…
Polarization effects are included exactly in a model for a quantum dot in close proximity to a planar interface. Efficient incorporation of this potential into the Schr\"{o}dinger equation is utilized to map out the influence of the image…
We study the combined effects of spin transfer torque, voltage modulation of interlayer exchange coupling and magnetic anisotropy on the switching behavior of perpendicular magnetic tunnel junctions (p-MTJs). In asymmetric p-MTJs, a…
We study interlayer exchange interaction in magnetic tunnel junctions with ferroelectric barrier. We focus on the influence of image forces on the voltage dependence of the interlayer magnetic interaction (magneto-electric effect). The…
Stable and switchable polarization of ferroelectric materials opens a possibility to electrically control their functional behavior. A particularly promising approach is to employ ferroelectric tunnel junctions where the polarization…
The dependence of the critical current density j_c on the ferromagnetic interlayer thickness d_F was determined for Nb/Al_2O_3/Cu/Ni/Nb Josephson tunnel junctions with ferromagnetic \Ni interlayer from very thin film thicknesses (\sim 1 nm)…
Using Landau-Ginzburg-Devonshire approach we calculated the equilibrium distributions of electric field, polarization and space charge in the ferroelectric-semiconductor heterostructures containing proper or incipient ferroelectric thin…
The influence of depolarizing field on the magnitude and stability of a uniform polarization in ferroelectric capacitors and tunnel junctions is studied using a nonlinear thermodynamic theory. It is predicted that, in heterostructures…
We study tunnel junctions consisting of a two-dimensional ferroelectric (FE) material sandwiched between graphene electrodes. We formulate a theory for the interplay of the FE polarization and induced free charges in such devices, taking…
Perpendicular magnetic tunnel junctions (p-MTJs) switched utilizing bipolar electric fields have extensive applications in energy-efficient memory and logic devices. Voltage-controlled magnetic anisotropy linearly lowers the energy barrier…
We study tunneling in ferromagnet/unconventional superconductor (F/S) junctions. We include the effects of spin polarization, interfacial resistance, and Fermi wavevector mismatch (FWM) between the F and S regions. Andreev reflection (AR)…