Related papers: Interfacial dead layer effects on current-voltage …
Tunneling between two-dimensional electron layers with mutually correlated disorder potentials is studied theoretically. Due to this correlation, the diffusive eigenstates in different layers are almost orthogonal to each other. As a…
We demonstrate a tunneling and rectification behavior in bilayer graphene. A stepped dielectric top gate creates a spatially modulated electric field, which opens the band gap in the graphene and produces an insulating region at the p-n…
While the exponential decay of tunneling probability with barrier thickness is well known, the accompanying oscillations with thickness have been comparatively less explored. Using a tight binding model, we investigate an AB-stacked bilayer…
The influence on the I-V characteristics and tunnel magnetoresistance (TMR), of impurities embedded into the insulating barrier I separating the two ferromagnetic electrodes F of a magnetic tunnel junction, was theoretically investigated.…
We study influence of image forces on conductance of ferroelectric tunnel junctions. We show that the influence of image forces is twofold: i) they enhance the electro-resistance effect due to polarization hysteresis in symmetric tunnel…
Two infinite, two-dimensional, lattice, free fermion systems, initially in different invariant states, are allowed to communicate via two point contacts, through which direct tunneling of fermions takes place. Calculations of the local…
A modified model of metal-semiconductor contacts is applied to analyze the capacitance-voltage and current-voltage characteristics of metal-ferroelectric-metal structures. The ferroelectric polarization is considered as a sheet of surface…
The effect of spin-disorder scattering on perpendicular transport in a magnetic monolayer is considered within the single-site Coherent Potential Approximation (CPA). The exchange interaction between a conduction electron and localized…
My research is dedicated to the electronic properties of functional oxides. My activity specifically focuses on ferroelectric tunnel junctions in which an ultrathin layer of ferroelectric material is intercalated between two metallic…
We calculate the tunnelling current through a Fabry-P\'{e}rot interferometer in the fractional quantum Hall regime. Within linear response theory (weak tunnelling but arbitrary source-drain voltage) we find a general expression for the…
The properties of Josephson devices are strongly affected by geometrical effects such as those associated with the magnetic field induced by the bias current. The generally adopted analysis of Owen and Scalapino [{\it Phys. Rev.}{\bf 164},…
Precisely engineered tunnel junctions exhibit a long sought effect that occurs when the energy of the electron is comparable to the potential energy of the tunneling barrier. The resistance of metal-insulator-metal tunnel junctions…
First-principles density functional calculations show that the $\textrm{SrRuO}_{3}/\textrm{PbTiO}_{3}/\textrm{SrRuO}_{3}$ multiferroic junction with asymmetric (RuO$_{2}$/PbO and TiO$_{2}$/SrO) interfaces has a large ferroelectric…
We review the concept of surface charge, first in the context of the polarization in ferroelectric materials, and second in the context of layers of charged ions in ionic insulators. While the former is traditionally discussed in the…
Recent advancements in laser technology have spurred growing interest in nonlinear and nonequilibrium phenomena. Here, we investigate the geometric aspects of quantum tunneling and the nonreciprocal response, particularly focusing on the…
We investigated a switchable ferroelectric diode effect and its physical mechanism in Pt/BiFeO3/SrRuO3 thin-film capacitors. Our results of electrical measurements support that, near the Pt/BiFeO3 interface of as-grown samples, a defective…
Conductivity mechanism in the regime of the intrinsic Josephson effect in layered superconductors with singlet d-wave pairing is studied theoretically. The cases of coherent and incoherent interlayer tunneling of electrons are considered.…
The tunneling electroresistance (TER) for ferroelectric tunnel junctions (FTJs) with BaTiO_{3} (BTO) and PbTiO}_{3} (PTO) barriers is calculated by combining the microscopic electronic structure of the barrier material with a macroscopic…
In polar oxide interfaces phenomena such as conductivity, superconductivity, magnetism, one-dimensional conductivity and Quantum Hall states can emerge at the polar discontinuity. Combining controllable ferroelectricity at such interfaces…
We have investigated the effect of thermal fluctuation on the interlayer coupling of three-dimensional Josephson-junction arrays with anisotropic interactions as a model of layered high-$T_c$ oxides, focusing on non-Ohmic current-voltage…