Related papers: Comment on "Mn Interstitial Diffusion in (Ga,Mn)As…
Hydrogenation and posthydrogenation annealings have been used as a very efficient tool to tune the hole density over a wide range, at fixed magnetic moment concentration, in thin GaMnAs layers. Reduction of the hole density resulted in…
This work reports theoretical and experimental study of the X-ray absorption near-edge structure (XANES) at the Mn K-edge in (Ga,Mn)As diluted magnetic semiconductors. The spectra have been calculated from the first-principles using FLAPW…
Density functional calculations with a large unit cell have been conducted to investigate adsorption, segregation and magnetization of Mn monomer on GaAs(110). The Mn adatom is rather mobile along the trench on GaAs(110), with an energy…
We report on measurements of the crystal structure and hole density in a series of as-grown and annealed GaMnAs samples. The measured hole densities are used to obtain the fraction of incorporated Mn atoms occupying interstitial and…
The detailed nature of electronic states mediating ferromagnetic coupling in dilute magnetic semiconductors, specifically (Ga,Mn)As, has been an issue of long debate. Two confronting models have been discussed emphasizing host band vs.…
Highly p-type GaAs:C was ion-implanted with Mn at differing doses to produce Mn concentrations in the 1 - 5 at.% range. In comparison to LT-GaAs and n+GaAs:Si samples implanted under the same conditions, transport and magnetic properties…
NiMn is a collinear antiferromagnet with high magneto crystalline anisotropy ($K_2=-9.7\times10^5\;\text{J m}^{-3}$). Through magnetic annealing of NiMn with excess Ni, strongly pinned magnetic moments emerge due to an imbalance in the…
The local density of states of Mn-Mn pairs in GaAs is mapped with cross-sectional scanning tunneling microscopy and compared with theoretical calculations based on envelope-function and tight-binding models. These measurements and…
The magnetic properties of (Ga,Mn)As thin films depend on both the Mn doping level and the carrier concentration. Using a post growth hydrogenation process we show that it is possible to decrease the hole density from 1.1021 cm-3 to <1017…
The minimum energy paths for the migration of interstitial Mg in wurtzite GaN are studied through density functional calculations. The study also comprises Li, Na, and Be dopants to examine the dependence on size and charge of the dopant…
First principles total-energy pseudopotential calculations have been performed to investigate STM images of the (110) cross-sectional surface of Mn-doped GaAs. We have considered configurations with Mn in interstitial positions in the…
The laser-induced precession of magnetization in (Ga,Mn)As samples with different magnetic anisotropy was studied by the time-resolved magneto-optical method. We observed that the dependence of the precession amplitude on the external…
This study was aimed to investigate the thickness dependent morphological changes of Mn films deposited on GaAs substrates by thermal evaporation technique. Ni films were deposited under same conditions to perform comparative study of the…
The purpose of this work was to obtain diffusion coefficient for the magnetic angular momentum transport and material transport in a rotating solar model. We assumed that the transport of both angular momentum and chemical elements caused…
This paper discusses transport methods for the investigation of the (Ga,Mn)As magnetic anisotropy. Typical magnetoresistance behaviour for different anisotropy types is discussed, focusing on an in depth discussion of the anisotropy…
The magnetic, transport, and structural properties of (Ga,Cr)As are reported. Zincblende Ga$_{1-x}$Cr$_{x}$As was grown by low-temperature molecular beam epitaxy (MBE). At low concentrations, x$\sim$0.1, the materials exhibit unusual…
We report on a systematic study of optical properties of (Ga,Mn)As epilayers spanning the wide range of accessible substitutional Mn_Ga dopings. The growth and post-growth annealing procedures were optimized for each nominal Mn doping in…
Investigating the scaling behavior of annealed Ga$_{1-x}$Mn$_{x}$As anomalous Hall coefficients, we note a universal crossover regime where the scaling behavior changes from quadratic to linear, attributed to the anomalous Hall Effect…
We have performed spatially resolved Polar Magneto-Optical Kerr Effect Microscopy measurements on as-grown and annealed Ga0.95Mn0.05As thin films with tensile strain. We find that the films exhibit very strong perpendicular magnetic…
We have studied the effects of capping ferromagnetic Ga(1-x)Mn(x)As epilayers with a thin layer of undoped GaAs, and we find that even a few monolayers of GaAs have a significant effect on the ferromagnetic properties. In particular, the…