Related papers: Giant low-temperature piezoresistance effect in Al…
We report low-temperature resistance measurements in a modulation-doped, (311)A GaAs two-dimensional hole system as a function of applied in-plane strain. The data reveal a strong but anisotropic piezoresistance whose magnitude depends on…
Two-dimensional electrons in AlAs quantum wells occupy multiple conduction-band minima at the X- points of the Brillouin zone. These valleys have large effective mass and g-factor compared to the stan-dard GaAs electrons, and are also…
We report ballistic transport measurements in a two-dimensional electron system confined to an AlAs quantum well and patterned with square antidot lattices of period $a = $0.6, 0.8, 1.0 and 1.5 $\mu$m. In this system two in-plane…
We report transport measurements of composite Fermions at filling factor $\nu=3/2$ in AlAs quantum wells as a function of strain and temperature. In this system the composite Fermions possess a valley degree of freedom and show…
We report measurements of the spin susceptibility in dilute two-dimensional electrons confined to a 45$\AA$ wide AlAs quantum well. The electrons in this well occupy an out-of-plane conduction-band valley, rendering a system similar to…
We have realized an AlAs two-dimensional electron system in which electrons occupy conduction-band valleys with different Fermi contours and effective masses. In the quantum Hall regime, we observe both resistivity spikes and persistent…
Thanks to their multi-valley, anisotropic, energy band structure, two-dimensional electron systems (2DESs) in modulation-doped AlAs quantum wells (QWs) provide a unique platform to investigate electron interaction physics and ballistic…
Degenerate conduction-band minima, or `valleys', in materials such as Si, AlAs, graphene, and MoS$_2$ allow them to host two-dimensional electron systems (2DESs) that can access a valley degree of freedom. These multivalley 2DESs present…
Electron-hole hybridization in InAs/GaSb double quantum well structures leads to the formation of a mini band gap. We experimentally and theoretically studied the impact of strain on the transport properties of this material system. Thinned…
An AlAs two-dimensional electron system patterned with an anti-dot lattice exhibits a giant piezoresistance (GPR) effect, with a sign opposite to the piezoresistance observed in the unpatterned region. We trace the origin of this anomalous…
Magnetic transitions in AlAs two-dimensional electrons give rise to sharp resistance spikes within the quantum Hall effect. Such spikes are likely caused by carrier scattering at magnetic domain walls below the Curie temperature. We report…
We report measurements of the spin susceptibility, $\chi\propto g_v g^*m^*$, in an AlAs two-dimensional electron system where, via the application of in-plane stress, we transfer electrons from one conduction-band valley to another ($g_v$…
We measure the effective mass (m*) of interacting two-dimensional electrons confined to a 4.5 nm-wide AlAs quantum well. The electrons in this well occupy a single out-of-plane conduction band valley with an isotropic in-plane Fermi…
A piezoelectric mechanism of orientation of stripes in two-dimensional quantum Hall systems in GaAs heterostructures is considered. The anisotropy of the elastic moduli and the boundary of the sample are taken into account. It is found that…
Electrical, magnetic and galvanomagnetic properties of half-metallic Heusler alloys of Co$_2$YZ (Y = Ti, V, Cr, Mn, Fe, Ni, and Z = Al, Si, Ga, Ge, In, Sn, Sb) were studied in the temperature range 4.2--900 K and in magnetic fields of up to…
Measurements on a two-dimensional electron system confined to an AlAs quantum well reveal that for a given electron density the valley susceptibility, defined as the change in valley population difference per unit strain, is enhanced as the…
The two-dimensional electron system in an InAs quantum well has emerged as a prime candidate for hosting exotic quasi-particles with non-Abelian statistics such as Majorana fermions and parafermions. To attain its full promise, however, the…
The resistive response of Ba(Fe$_{1-x}$Co$_{x}$)$_{2}$As$_{2}$ to AC mechanical deformation is considered in the multi-domain state. This resistance change depends both upon the anelastic relaxation of domain walls and upon the relation…
We measure the effective Lande g-factor of high-mobility two-dimensional electrons in a modulation-doped AlAs quantum well by tilting the sample in a magnetic field and monitoring the evolution of the magnetoresistance oscillations. The…
The longitudinal resistivity of two dimensional (2D) electrons placed in strong magnetic field is significantly reduced by applied electric field, an effect which is studied in a broad range of magnetic fields and temperatures in GaAs…