Related papers: Size scaling of the addition spectra in silicon qu…
A simple model for addition spectra in quantum dots is proposed and studied. It is an extension of the standard charging model which assumes that the charge spreads uniformely over the entire dot. The proposed model attempts to account for…
The dependences of the fundamental transition on the semiconductor quantum dot size obtained experimentally at various temperatures using different measuring methods are analyzed and compared. The possibility to extrapolate the results for…
A high quality amorphous silicon (a-Si) nanostructures has grown experimentally to study the origin of light emission and the quantum confinement effect in a-Si. The quantum confinement effect increases the band gap of material as the size…
Using atomistic pseudopotential wave functions we calculate the electron and hole charging energies of InAs quantum dots. We find that the charging energies depend strongly on the dielectric constant epsilon_out of the surrounding material,…
Quantum dots are small conductive regions in a semiconductor, containing a variable number of electrons (N=1 to 1000) that occupy well defined discrete quantum states. They are often referred to as artificial atoms with the unique property…
Using an approximate time-dependent density functional theory method, we calculate the absorption and luminescence spectra for hydrogen passivated silicon nanoscale structures with large aspect ratio. The effect of electron confinement in…
The electron addition spectrum A^+(k,omega) is obtained analytically for the one-dimensional (1D) supersymmetric t-J model with 1/r^2 interaction. The result is obtained first for a small-sized system and its validity is checked against the…
Using Single Electron Capacitance Spectroscopy, we study electron additions in quantum dots containing two potential minima separated by a shallow barrier. Analysis of addition spectra in magnetic field allows us to distinguish whether…
We investigate the dissociation of few-electron circular vertical semiconductor double quantum dot artificial molecules at 0 T as a function of interdot distance. Slight mismatch introduced in the fabrication of the artificial molecules…
We study optically single self-assembled quantum dots embedded within the wide quantum well of a mixed type quantum structure. We compare the steady state and pulsed photoluminescence spectra of these dots to those of previously studied…
Quantum networks based on InGaAs quantum dots embedded in photonic crystal devices rely on QDs being in resonance with each other and with the cavities they are embedded in. We developed a new technique based on temperature tuning to…
In this paper we show how to measure in the setting of digital quantum simulations the reflection and transmission amplitudes of the one-dimensional scattering of a particle with a short-ranged potential. The main feature of the protocol is…
Spatially structured light fields applied to semiconductor quantum dots yield fundamentally different absorption spectra than homogeneous beams. In this paper, we theoretically discuss the resulting spectra for different light beams using a…
A theoretical study of single electron capacitance spectroscopy in quantum dots is presented. Exact diagonalizations and the unrestricted Hartree-Fock approximation have been used to shed light over some of the unresolved aspects. The…
We develop a theoretical formalism to model the linear spectrum of a quantum dot embedded in a high quality cavity, in presence of an arbitrary mechanism modifying the homogeneous spectrum of the quantum dot. Within the simple assumption of…
The strength of light emission near metallic nanostructures can scale anomalously with frequency and dimensionality. We find that light-matter interactions in plasmonic systems confined in two dimensions (e.g., near metal nanowires)…
Dielectric constant and absorption measurements on boron doped silicon samples show that transitions between the acceptor energy levels can be induced by an applied resonant ac electric field and the Stark tuning of level spacing with an…
We examine the energy spectrum of a charged particle in the presence of a {\it non-rotating} finite electric dipole. For {\emph{any}} value of the dipole moment $p$ above a certain critical value p_{\mathrm{c}}$ an infinite series of bound…
We investigate theoretically the spatial dependence of the linear absorption spectra of single and coupled semiconductor quantum dots, where the strong three-dimensional quantum confinement leads to an overall enhancement of Coulomb…
Quantum dots are fabricated in a Ga[Al]As-heterostructure by local oxidation with an atomic force microscope. This technique, in combination with top gate voltages, allows us to generate steep walls at the confining edges and small lateral…