Related papers: Observing sub-microsecond telegraph noise with the…
The electrical and optical response of a field-effect device comprising a network of semiconductor-enriched single-wall carbon nanotubes, gated with sodium chloride solution is investigated. Field-effect is demonstrated in a device that…
We propose an explicit small-signal graphene field-effect transistor (GFET) parameter extraction procedure based on a charge-based quasi-static model. The dependence of the small-signal parameters on both gate voltage and frequency is…
With the growing efforts in isolating solid-state qubits from external decoherence sources, the material-inherent sources of noise start to play crucial role. One representative example is electron traps in the device material or substrate.…
Noise and decoherence due to spurious two-level systems (TLS) located at material interfaces is a long-standing issue in solid state quantum technologies. Efforts to mitigate the effects of TLS have been hampered by a lack of surface…
We derive the symmetrized current-noise spectrum of a quantum dot, which is weakly tunnel-coupled to an electron reservoir and driven by a slow time-dependent gate voltage. This setup can be operated as an on-demand emitter of single…
We investigate gate voltage dependence of electrical readout noise in high-speed rf reflectometry using gallium arsenide quantum dots. The fast Fourier transform spectrum from the real time measurement reflects build-in device noise and…
We present the results of the experimental investigation of the low - frequency noise in bilayer graphene transistors. The back - gated devices were fabricated using the electron beam lithography and evaporation. The charge neutrality point…
Feedback control of quantum mechanical systems is rapidly attracting attention not only due to fundamental questions about quantum measurements but also because of its novel applications in many fields in physics. Quantum control has been…
We demonstrate a sensitive method of charge detection based on radio-frequency readout of the Josephson inductance of a superconducting single-electron transistor. Charge sensitivity $1.4 \times 10^{-4}e/\sqrt{Hz}$, limited by preamplifier,…
New experiments that measure the low-frequency shot-noise spectrum at local tunneling contacts on mesoscopic structures are proposed. The current fluctuation spectrum at a single tunneling tip is determined by local partial densities of…
Starting from the Kubo formula for conductance, we calculate the frequency-dependent response of a single-electron transistor (SET) driven by an ac signal. Treating tunneling processes within the lowest order approximation, valid for a wide…
The Single electron Sensitive Read Out (SiSeRO) is a novel on-chip charge detector output stage for charge-coupled device (CCD) image sensors. Developed at MIT Lincoln Laboratory, this technology uses a p-MOSFET transistor with a depleted…
Graphene-based devices show $1/f$ low-frequency noise in several electronic transport properties, such as mobility and charge carrier concentration. The recent outburst of experimental studies on graphene-based devices integrated into…
We analyze the shot noise in a voltage biased superconducting quantum point-contact. Results are presented for the single channel case with arbitrary transmission. In the limit of very low transmission it is found that the effective charge,…
We report fast, simultaneous charge sensing and transport measurements of gate-defined carbon nanotube quantum dots. Aluminum radio frequency single electron transistors (rf-SETs) capacitively coupled to the nanotube dot provide…
We report on charge sensing measurements of a GaAs semiconductor quantum dot device using a radio frequency quantum point contact (rf-QPC). The rf-QPC is fully characterized at 4 K and milli-Kelvin temperatures and found to have a bandwidth…
Solid-state systems which mimic two-level atoms are being actively developed. Improving the quantum coherence of these systems, for instance spin qubits or single photon emitters using semiconductor quantum dots, involves dealing with…
We present low-frequency electrical resistance fluctuations, or noise, in graphene-based field-effect devices with varying number of layers. In single-layer devices the noise magnitude decreases with increasing carrier density, which…
In this paper, we discuss a new technique for measuring transceiver noise, skew, and for the detection of uncompensated transceiver impairments. The method consists on the introduction of frequency domain notch or notches at the…
Current fluctuations related to the discreteness of charge passing through small constrictions are termed shot noise. This unavoidable noise provides both advantages - being a direct measurement of the transmitted particles' charge, and…