Related papers: Single-crystal field-effect transistors based on c…
By means of high-pressure resistivity measurements on single crystals, we investigate the charge transport properties of Cu$_x$PdTe$_2$, notable for the combination of topological type-II Dirac semimetallic properties with superconductivity…
To explore new materials for the realization of the quantum anomalous Hall effect (QAHE), we studied electronic, magnetic and topological properties of transition-metal phthalocyanine (TMPc) monolayers in a square lattice. Many of them have…
Charge-transfer excitons (CTX) at organic donor/acceptor interfaces are considered important intermediates for charge separation in photovoltaic devices. Crystalline model systems provide microscopic insights into the nature of such states…
A single photoelectron can be trapped and its photoelectric charge detected by a source/drain channel in a transistor. Such a transistor photodetector can be useful for flagging the safe arrival of a photon in a quantum repeater. The…
We demonstrate tunable solid state and flexible graphene field effect devices (FEDs) fabricated using a poly(methylmethacrylate) (PMMA) and lithium fluoride (LiF) composite dielectric. Increasing the concentration of LiF in the composite…
The development of high-performance multifunctional polymer-based electronic circuits is a major step towards future flexible electronics. Here, we demonstrate a tunable approach to fabricate such devices based on rationally designed…
Thickness engineered tunneling field-effect transistors (TE-TFET) as a high performance ultra-scaled steep transistor is proposed. This device exploits a specific property of 2D materials: layer thickness dependent energy bandgap (Eg).…
A novel nanoelectronic device is constructed by graphyne that is robustly connected between graphene electrodes, where graphyne is composed of hexagonal carbon rings and carbon chains. Owing to similarities between the bond lengths and unit…
The epitaxial growth of multifunctional oxides on semiconductors has opened a pathway to introduce new functionalities to semiconductor device technologies. In particular, ferroelectric materials integrated on semiconductors could lead to…
Single crystal of Cu0.03TaS2 with low copper intercalated content was successfully grown via chemical iodine-vapor transport. The structural characterization results show that the copper intercalated 2H-Cu0.03TaS2 single crystal has the…
Single crystal of YCoGa5 has been grown via Ga self-flux. In this paper, we report the single crystal growth, crystallographic parameters, resistivity, heat capacity, and band structure results of YCoGa5. YCoGa5 accommodates the HoCoGa5…
The rates of a hindered molecular rotation induced by tunneling electrons are evaluated using scattering theory within the sudden approximation. Our approach explains the excitation of copper phthalocyanine molecules (CuPc) on Cu(111) as…
We fabricate and characterize dual-gated graphene field-effect transistors (FETs) using Al2O3 as top-gate dielectric. We use a thin Al film as a nucleation layer to enable the atomic layer deposition of Al2O3. Our devices show mobility…
Transition metal phthalocyanines (TMPc's) are under intense scrutiny in the field of spintronics, as they may be promising storage devices. The simplicity and cheapness of such molecules increase their commercial potential. There is an…
We develop a novel field effect transistor (FET) device using solid ion conductor (SIC) as a gate dielectric, and we can tune the carrier density of FeSe by driving lithium ions in and out of the FeSe thin flakes, and consequently control…
We develop theoretical arguments that demonstrate the possibility of metallic field-effect transistors (METFET's) in one-dimensional systems and particularly in armchair carbon nanotubes. A very inhomogeneous electric field, such as the…
In this work we demonstrate a new Field Effect Transistor device concept based on hydrogen-terminated diamond (H-diamond) that operates in an Accumulation Channel rather than Transfer Doping regime. Our FET devices demonstrate both extreme…
Gate capacitances of back-gated nanowire field-effect transistors (NW-FETs) are calculated by means of finite element methods and the results are compared with analytical results of the ``metallic cylinder on an infinite metal plate…
We demonstrate solution processable large area field effect transistors (FETs) from aligned arrays of carbon nanotubes (CNTs). Commercially available, surfactant free CNTs suspended in aqueous solution were aligned between source and drain…
The transient negative capacitance (NC) of solid ferroelectric materials used in field effect transistors can reduce the power dissipation of electronics. Here we show that similar negative capacitance appears in the recently discovered…