Related papers: Bias voltage controlled magnetization switch in fe…
We report on magnetoconductance measurements through a weakly coupled quantum dot, containing roughly 900 electrons, in a wide magnetic field range from 0 T to 12 T. We find modulations of the conductance resonances in the quantum Hall…
Thermodynamics of a spin-1 Bose gas with ferromagnetic interactions are investigated via the mean-field theory. It is apparently shown in the specific heat curve that the system undergoes two phase transitions, the ferromagnetic transition…
The possibility of quantum oscillations of the tunnel conductance and magnetoresistance induced by spin-wave excitations in a ferromagnet-ferromagnet-ferromagnet double barrier tunnel junction, when the magnetizations of the two side…
A magnetic tunnel junctions composed of room temperature ferromagnetic semiconductor rutile Ti1-xCoxO2-d and ferromagnetic metal Fe0.1Co0.9 separated by AlOx barrier showed positive tunneling magnetoresistance (TMR) with a ratio of ~11 % at…
We theoretically investigate impurity correlation and magnetic clustering effects on the long-range ferromagnetic ordering in diluted magnetic semiconductors, such as $\textrm{Ga}_{1-x}\textrm{Mn}_{x}\textrm{As}$, using analytical arguments…
In the pursuit of room temperature quantum hardware, our study introduces a gate voltage tunable quantum wire within a tri-gated n-type junctionless MOSFET. The application of gate voltage alters the parabolic potential well of the…
We propose a tunneling heterostructure by replacing one of the metal electrodes in a metal/ferroelectric/metal ferroelectric tunnel junction with a heavily doped semiconductor. In this metal/ferroelectric/semiconductor tunnel diode, both…
Recently discovered superconducting P-doped EuFe$_2$As$_2$ compounds reveal the situation when the superconducting critical temperature substantially exceeds the ferromagnetic transition temperature. The main mechanism of the interplay…
Quantum dots are useful model systems for studying quantum thermoelectric behavior because of their highly energy-dependent electron transport properties, which are tunable by electrostatic gating. As a result of this strong energy…
We propose the use of resonant tunneling as a route to enhance the spin-transfer torque switching characteristics of magnetic tunnel junctions. The proposed device structure is a resonant tunneling magnetic tunnel junction based on a…
We investigate the minimal requirements that induce a nonreciprocal response to temperature differences in a mesoscopic electronic conductor. We identify two distinct mechanisms involved in electron-electron interactions, namely inelastic…
The magneto-electric properties of resonant tunneling double barrier structures using GaMnAs for the quantum well is investigated within a self-consistent Green's function approach and a tight-binding electronic structure model. The…
A minority-spin resonant state at the Fe/GaAs(001) interface is predicted to reverse the spin polarization with voltage bias of electrons transmitted across this interface. Using a Green's function approach within the local spin density…
Using a quantum theory including spin-splitting effect in diluted magnetic semiconductors, we study the dependence of tunneling magnetoresistance (TMR) on barrier thickness, temperature and applied voltage in GaMnAs/GaAs/GaMnAs…
There is currently much interest in materials and structures that provide coupled ferroelectric and ferromagnetic responses, with a long-term goal of developing new memories and spintronic logic elements. Within the field there is a focus…
We present a theoretical analysis of the nonlinear bias and temperature dependence of current-voltage characteristics of a spin-valve device which is formed by connecting a quantum dot to two ferromagnetic electrodes whose magnetic moments…
In quantum dot junctions capacitively coupled to a resonator, electron tunneling through the quantum dot can be used to transfer heat between different parts of the system. This includes cooling or heating the electrons in electrodes and…
Self consistent renormalization theory of itinerant ferromagnets is used to calculate the Curie temperature of clusters down to approximately 100 atoms in size. In these clusters the electrons responsible for the magnetic properties are…
Altermagnets can replace ferromagnets in tunnel junctions, yielding large tunneling magnetoresistance, ultrafast switching, and low-power functionality. While most studies explore the linear-response regime, interesting features emerge at…
A review is given of advances in the field of carrier-controlled ferromagnetism in Mn-based diluted magnetic semiconductors and their nanostructures. Experimental results for III-V materials, where the Mn atoms introduce both spins and…