Related papers: Spin Injection and Relaxation in Ferromagnet-Semic…

We study the relaxation of the exciton spin (longitudinal relaxation time $T_{1}$) in single asymmetrical quantum dots due to an interplay of the short--range exchange interaction and acoustic phonon deformation. The calculated relaxation…

We investigate theoretically the coherent longitudinal and transversal spin relaxation of photoexcited electrons in quantum wells in quantized magnetic fields. We find the relaxation time for typical quantum well parameters between 100 and…

We present measurements of the dynamics of a polarized magnetic environment coupled to the flux degree of freedom of rf-SQUID flux qubits. The qubits are used as both sources of polarizing field and detectors of the environmental…

We study the spin polarization of tunneling holes injected from ferromagnetic GaMnAs into a p-doped semiconductor through a tunneling barrier. We obtain an upper limit to the spin injection rate. We find that spin-orbit interaction…

We investigate effect of a step-doping profile on the spin injection from a ferromagnetic metal contact into a semiconductor quantum well (QW) in spin FETs using a Monte Carlo model. The considered scheme uses a heavily doped layer at the…

Spin semimetals are a recently discovered new class of spintronic materials, which exhibit a band gap in one spin channel while a semimetallic feature in the other and thus allows for tunable spin transport. Here, we present experimental…

The spin excitations from the nonmagnetic charge-ordered insulating state of $\alpha$-(BEDT-TTF)$_2$I$_3$ at ambient pressure have been investigated by probing the static and low-frequency dynamic spin susceptibilities via site-selective…

We report the room-temperature electroluminescence (EL) with nearly pure circular polarization (CP) from GaAs-based spin-polarized light-emitting diodes (spin-LEDs). External magnetic fields are not used during device operation. There are…

We study coherent spin transport through helical edge states of topological insulator tunnel-coupled to metallic leads. We demonstrate that unpolarized incoming electron beam acquires finite polarization after transmission through such a…

We have theoretically studied the temporal fluctuations and the resulting kinetic noise in the average spin polarization of an electron ensemble drifting in a quantum wire under a high electric field. Electrons are initially injected in the…

Hole spin relaxation time due to the hole-acoustic phonon scattering in GaAs quantum dots confined in quantum wells along (001) and (111) directions is studied after the exact diagonalization of Luttinger Hamiltonian. Different effects such…

Low-temperature electron spin relaxation is studied by the optical orientation method in bulk n-GaAs with donor concentrations from 10^14 cm^{-3} to 5x10^17 cm^{-3}. A peculiarity related to the metal-to-insulator transition (MIT) is…

We present a theory of the imprinting of the electron spin coherence and population in an n-doped semiconductor which forms a junction with a ferromagnet. The reflection of non-equilibrium semiconductor electrons at the interface provides a…

We report electronic control and measurement of an imbalance between spin-up and spin-down electrons in micron-scale open quantum dots. Spin injection and detection was achieved with quantum point contacts tuned to have spin-selective…

Undoped and slightly Eu-doped SmB6 show the opening of a gap with decreasing temperature below ~150 K. The spectral shapes near the Fermi level (EF) at 15 K have shown strong increase in intensity of a peak at a binding energy (EB) of…

Using a combination of heat pulse and nuclear magnetic resonance techniques we demonstrate that the phase boundary separating the interlayer phase coherent quantum Hall effect at $\nu_T = 1$ in bilayer electron gases from the weakly coupled…

Spontaneous nuclear polarization is predicted in double quantum dots in the spin-blocked electron transport regime. The polarization results from an instability of the zero-polarization state when singlet and triplet electron energy levels…

We derive a drift-diffusion equation for spin polarization in semiconductors by consistently taking into account electric-field effects and nondegenerate electron statistics. We identify a high-field diffusive regime which has no analogue…

To establish a correlation between the spin diffusion, the spin lifetime, and the electron density, we study, employing time-resolved magneto-optical Kerr effect microscopy, the spin polarization evolution in low-dimensional GaAs…

Taking into account the available experimental results, we model the electronic properties and current-voltage characteristics of a ferromagnet-semiconductor junction. The Fe/GaAs interface is considered as a Fe/(i-GaAs)/n+-GaAs/n-GaAs…