Related papers: Two-photon spin injection in semiconductors
We attract attention to the fact that the ultimate (shot-noise-limited) polarimetric sensitivity can be enhanced by orders of magnitude leaving the photon flux incident onto the photodetector on the same low level. This opportunity is of…
Optical orientation has been proven as a powerful tool to inject spin-polarized electron and hole populations in III-V and group-IV semiconductors. In particular, the absorption of circularly-polarized light in bulk Ge generates a…
We demonstrate theoretically that spin dynamics of electrons injected into a GaAs semiconductor structure through a Schottky barrier possesses strong non-equilibrium features. Electrons injected are redistributed quickly among several…
The spin susceptibility of a two-dimensional electron system is calculated by determining the spin-polarization dependence of the ground-state energy within the self-consistent mean-field theory of Singwi et al. (STLS). Results are…
We explore electrically injected, spin polarized transport in a ballistic two-dimensional electron gas. We augment the Buettiker-Landauer picture with a simple, but realistic model for spin-selective contacts to describe multimode…
We present first-principles calculations of ballistic spin injection in Fe/GaAs and Fe/ZnSe junctions with orientation (001), (111), and (110). We find that the symmetry mismatch of the Fe minority-spin states with the semiconductor…
Magnetic $p$-$n$ junction diodes are fabricated to investigate spin-polarized electron transport. The injection of spin-polarized electrons in a semiconductor is achieved by driving a current from a ferromagnetic injector (Fe), into a bulk…
Quantum interference between one- and two-photon absorption pathways allows coherent control of interband transitions in unbiased bulk semiconductors; carrier population, carrier spin polarization, photocurrent injection, and spin current…
We study theoretically the spin relaxation rate in quasi-one-dimensional coupled double semiconductor quantum dots. We consider InSb and GaAs-based systems in the presence of the Rashba spin-orbit interaction, which causes mixing of…
We put forward a mechanism for current induced spin polarization for a hole in a quantum dot side-coupled to a quantum wire, that is based on the spin-orbit splitting of the valence band. We predict that in a stark contrast with the…
Spin injection from Co70Fe30 and Fe contacts into bulk GaAs(001) epilayers is studied experimentally. Using nonlocal measurements, the spin polarization of the differential conductance is determined as a function of the bias voltage applied…
We investigate spin-polarized inter-band tunneling through measurement of (Ga,Mn)As based Zener tunnel diode. By placing the diode under reverse bias, electron spin polarization is transferred from the valence band of p-type (Ga,Mn)As to…
Layered 2D van der Waals materials, such as transition metal dichalcogenides, are promising for nanoscale spintronic and optoelectronic applications. Harnessing their full potential requires understanding both intrinsic transport and the…
The spin-dependent recombination (SDR) has been observed in GaAs_{1-x}N_{x} (x = 2.1, 2.7, 3.4%) at room temperature. It reveals itself in a decrease of the edge photoluminescence (PL) intensity by more than a factor of 3 when either the…
Pure spin currents are measured in micron-wide channels of GaAs two-dimensional electron gas (2DEG). Spins are injected and detected using quantum point contacts, which become spin polarized at high magnetic field. High sensitivity to the…
We present a study of spin transport in charge and spin inhomogeneous semiconductor systems. In particular, we investigate the propagation of spin-polarized electrons through a boundary between two semiconductor regions with different…
We calculate the efficiency of infrared optical spin injection in single-layer graphene with Rashba spin-orbit coupling and for in-plane magnetic field. The injection rate in the photon frequency range corresponding to the Rashba splitting…
A normally incident light of linear polarization injects a pure spin current in a strip of 2-dimensional electron gas with spin-orbit coupling. We report observation of an electric current with a butterfly-like pattern induced by such a…
Electron spin polarizations of 32% are obtained in a GaAs quantum well via electrical injection through a reverse-biased Fe/AlGaAs Schottky contact. An analysis of the transport data using the Rowell criteria demonstrates that single step…
Optical spin orientation and depolarization phenomena in semiconductors are of overwhelming importance for the development of spin-optoelectronics. In this paper we employ Ge-based spin-photodiodes to investigate the room temperature…