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The phase diagram of model Mott-insulator--band-insulator heterostructures is studied using the semiclassical approximation to the dynamical-mean-field method as a function of thickness, coupling constant, and charge confinement. An…

Strongly Correlated Electrons · Physics 2009-11-11 Satoshi Okamoto , Andrew J. Millis

Electronic properties of heterostructures in which a finite number of Mott-insulator layers are sandwiched by semi-infinite metallic leads are investigated by using the dynamical-mean-field method combined with the Keldysh Green's function…

Strongly Correlated Electrons · Physics 2009-11-13 Satoshi Okamoto

The dynamical-mean-field method is applied to investigate the transport properties of heterostructures consisting of a strongly-correlated electron system connected to metallic leads. The spectral function inside the correlated region is…

Strongly Correlated Electrons · Physics 2008-09-12 Satoshi Okamoto

We present an embedding approach based on localized basis functions which permits an efficient application of the dynamical mean field theory (DMFT) to inhomogeneous correlated materials, such as semi-infinite surfaces and heterostructures.…

Strongly Correlated Electrons · Physics 2009-11-13 H. Ishida , A. Liebsch

Dynamical mean field theory is employed to calculate the properties of multilayered inhomogeneous devices composed of semi-infinite metallic lead layers coupled via barrier planes that are made from a strongly correlated material (and can…

Strongly Correlated Electrons · Physics 2009-11-10 J. K. Freericks

We theoretically investigate a two-dimensional heterostructure composed of a topological insulator (TI) and a Mott insulator (MI), and clarify what kind of electronic states can be realized at the interface. By using inhomogeneous dynamical…

Strongly Correlated Electrons · Physics 2013-09-13 Suguru Ueda , Norio Kawakami , Manfred Sigrist

Simulations are carried out based on the dynamical mean-field theory (DMFT) in order to investigate the properties of correlated thin films for various values of the chemical potential, temperature, interaction strength, and applied…

Strongly Correlated Electrons · Physics 2016-05-04 Petar Bakalov , Davoud Nasr Esfahani , Lucian Covaci , Francois Peeters , Jacques Tempere , Jean-Pierre Locquet

The correlation-driven metal-insulator (Mott) transition at a solid surface is studied within the Hubbard model for a semi-infinite lattice by means of the dynamical mean-field theory. The transition takes place at a unique critical…

Strongly Correlated Electrons · Physics 2009-10-31 M. Potthoff , W. Nolting

We investigate the photocurrent and spectral features in a simplified model of a Mott photovoltaic system consisting of a multilayered insulating heterostructure. The central correlated region is coupled to two metallic leads kept at…

Strongly Correlated Electrons · Physics 2024-07-17 Paolo Gazzaneo , Daniel Werner , Tommaso Maria Mazzocchi , Enrico Arrigoni

We study a model of a covalent band insulator with on-site Coulomb repulsion at half-filling using dynamical mean-field theory. Upon increasing the interaction strength the system undergoes a discontinuous transition from a correlated band…

Strongly Correlated Electrons · Physics 2009-10-16 Michael Sentef , Jan Kunes , Philipp Werner , Arno P. Kampf

The physics of doping a Mott insulator is investigated in the presence of a solid-vacuum interface. Using the embedding approach for dynamical mean field theory we show that the change in surface spectral evolution in a doped Mott insulator…

Strongly Correlated Electrons · Physics 2011-07-12 Reza Nourafkan , Frank Marsiglio

We present a theoretical study of a model heterostructure for a Mott-insulator sandwiched between two band insulators, such as SrTiO3/LaTiO3. Particular emphasis is given on the interplay between magnetism and inhomogeneous charge…

Strongly Correlated Electrons · Physics 2013-02-19 Suguru Ueda , Norio Kawakami , Manfred Sigrist

We investigate proximity effects in a correlated heterostructure of a two-dimensional Mott insulator (MI) and a topological insulator (TI) by employing inhomogeneous dynamical mean-field theory. We show that the edge state of the TI induces…

Strongly Correlated Electrons · Physics 2015-06-15 Suguru Ueda , Norio Kawakami , Manfred Sigrist

Oxide heterostructures are a new class of materials by design, that open the possibility for engineering challenging electronic properties, in particular correlation effects beyond an effective single-particle description. This short review…

Materials Science · Physics 2018-08-24 Frank Lechermann

We study the effect of spatial inhomogeneity on the physics of a strongly correlated electron system exhibiting a metallic phase and a Mott insulating phase, represented by the simple Hubbard model. In three dimensions, we consider various…

Strongly Correlated Electrons · Physics 2015-05-14 Giovanni Borghi , Michele Fabrizio , Erio Tosatti

A theory of heterostructures comprised of LaTiO$_3$ (a Mott insulator) and SrTiO$_3$ (a band insulator) is presented. The band structure of the Ti $d$% -electrons is treated with a nearest neighbor tight-binding approximation; the electric…

Strongly Correlated Electrons · Physics 2009-11-10 Satoshi Okamoto , Andrew J. Millis

We extend a previous analysis of spatial correlation functions for classical electromagnetic vector fields near a perfectly conducting boundary [PRE, vol. 73, 036604 (2006)] to the case of an isotropic semi-infinite medium with planar…

Optics · Physics 2009-11-13 Luk R. Arnaut

These are introductory lectures to some aspects of the physics of strongly correlated electron systems. I first explain the main reasons for strong correlations in several classes of materials. The basic principles of dynamical mean-field…

Strongly Correlated Electrons · Physics 2009-09-29 Antoine Georges

We present a new method to compute the electronic structure of correlated materials combining the hybrid functional method with the dynamical mean-field theory. As a test example of the method we study cerium sesquioxide, a strongly…

Materials Science · Physics 2008-12-15 D. Jacob , K. Haule , G. Kotliar

The electronic structure at the interface between a topological band insulator and a Mott insulator is studied within layer dynamical mean field theory. To represent the bulk phases of these systems, we use the generalized…

Strongly Correlated Electrons · Physics 2015-06-22 H. Ishida , A. Liebsch
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