Related papers: Background charge fluctuation in a GaAs quantum do…
Silicon quantum dot qubits show great promise but suffer from charge noise with a 1/f^\alpha spectrum, where f is frequency and \alpha \lesssim 1. It has recently been proposed that 1/f^\alpha noise spectra can emerge from a few thermally…
We have studied the origin of switching (telegraph) noise at low temperature in lateral quantum structures defined electrostatically in GaAs/AlGaAs heterostructures by surface gates. The noise was measured by monitoring the conductance…
The statistics of electron transport in a quantum conductor is affected by fluctuations of its voltage bias. Here we show experimentally how a third order correlation in the electromagnetic field arises from the noise of a tunnel junction…
Due to presence of magnetic field gradient needed for coherent spin control, dephasing of single-electron spin qubits in silicon quantum dots is often dominated by $1/f$ charge noise. We investigate theoretically fluctuations of ground…
Charge noise in semiconducting quantum dots has been observed to have a 1/f spectrum. We propose a model in which a pair of quantum dots are coupled to a 2D bath of fluctuating two level systems (TLS) that have electric dipole moments and…
In quantum computation, quantum coherence must be maintained during gate operation. However, in physical implementations, various couplings with the environment are unavoidable and can lead to a dephasing of a quantum bit(qubit). The…
We calculate the counting statistics of electron transfer through an open quantum dot with charging interaction. A dot that is connected to leads by two single-channel quantum point contacts in an in-plane magnetic field is described by a…
We report measurements of the low frequency current fluctuations of a tunnel junction placed at very low temperature biased by a time-dependent voltage $V(t)=V(1+\cos 2\pi\nu t)$. We observe that the excess noise generated by the ac…
We investigate theoretically and experimentally the full counting statistics of bidirectional single-electron tunneling through a double quantum dot in a GaAs/GaAlAs heterostructure and compare with predictions of the fluctuation theorem…
Critical current fluctuations with a 1/ f spectral density (f is frequency) are potentially a limiting source of intrinsic decoherence in superconducting quantum bits (qubits) based on Josephson tunnel junctions. Prior measurements of this…
A time-dependent bias voltage on a tunnel junction generates a time-dependent modulation of its current fluctuations, and in particular of its variance. This translates into an excitation at frequency $\tilde{f}$ generating correlations…
We investigate bias-driven non-equilibrium quantum phase transitions in a paradigmatic quantum-transport setup: an interacting quantum dot coupled to non-interacting metallic leads. Using the Random Phase Approximation, which is exact in…
Although the Fluctuation-Dissipation framework is a first step to get a quantum model for electrical noise, the merging of displacement and conduction currents into the sole current of a series notion like the resistance R(f) does not help…
We study noise spectra of currents through a tunnel junction in weak tunneling limit. We introduce effective capacitance to take into account the interaction effect and explicitly incorporate the electromagnetic environment of the junction…
We probe local charge fluctuations in a semiconductor via laser spectroscopy on a nearby self-assembled quantum dot. We demonstrate that the quantum dot is sensitive to changes in the local environment at the single charge level. By…
Electron spins in silicon quantum dots are excellent qubits due to their long coherence times, scalability, and compatibility with advanced semiconductor technology. Although high gate fidelities can be achieved with spin qubits, charge…
We investigate the noise properties of a GaAs-AlAs-GaAs tunneling structure with embedded self-assembled InAs quantum dots in the single-electron tunneling regime. We analyze the dependence of the relative noise amplitude of the shot noise…
The fluctuations of electrical current provide information on the dynamics of electrons in quantum devices. Understanding the nature of these fluctuations in a quantum dot is thus a crucial step insofar as this system is the elementary…
Experiments on the direction-resolved full-counting statistics of single-electron tunneling allow testing the fundamentally important Fluctuation Theorem (FT). At the same time, the FT provides a frame for analyzing such data. Here we…
Discrete charge fluctuations, routinely observed in semiconductor quantum dot devices, may contribute significantly to device drift and errors resulting from qubit miscalibration. Understanding the nature and origins of these discrete…