Related papers: Silicon-based spin quantum computation and the sha…
We present a strategy for producing multi-qubit gates that promise high fidelity with minimal tuning requirements. Our strategy combines gap protection from the adiabatic theorem with dynamical decoupling in a complementary manner. To avoid…
We experimentally study the coupling of Group V donor spins in silicon to mechanical strain, and measure strain-induced frequency shifts which are linear in strain, in contrast to the quadratic dependence predicted by the valley…
We apply the full power of modern electronic band structure engineering and epitaxial heterostructures to design a transistor that can sense and control a single donor electron spin. Spin resonance transistors may form the technological…
Spin qubits hosted in silicon (Si) quantum dots (QD) are attractive due to their exceptionally long coherence times and compatibility with the silicon transistor platform. To achieve electrical control of spins for qubit scalability, recent…
Capacitively coupled semiconductor spin qubits hold promise as the building blocks of a scalable quantum computing architecture with long-range coupling between distant qubits. However, the two-qubit gate fidelities achieved in experiments…
Architectures of donor-electron based qubits in silicon near an oxide interface are considered theoretically. We find that the precondition for reliable logic and read-out operations, namely the individual identification of each donor-bound…
Spins of electrons in CMOS quantum dots combine exquisite quantum properties and scalable fabrication. In the age of quantum technology, however, the metrics that crowned Si/SiO2 as the microelectronics standard need to be reassessed with…
As the nascent field of quantum computing develops, an increasing number of quantum hardware modalities, such as superconducting electronic circuits, semiconducting spins, trapped ions, and neutral atoms, have become available for…
We identify the presence of monoatomic steps at the Si/SiGe or Si/SiO$_2$ interface as a dominant source of variations in the dephasing time of Si quantum dot (QD) spin qubits. First, using atomistc tight-binding calculations we show that…
The scattering of conduction electrons off neutral donors depends sensitively on the relative orientation of their spin states. We present a theory of spin-dependent scattering in the two dimensional electron gas (2DEG) of field effect…
High fidelity entanglement of an on-chip array of spin qubits poses many challenges. Spin-orbit coupling (SOC) can ease some of these challenges by enabling long-ranged entanglement via electric dipole-dipole interactions, microwave…
All-electrical baseband control of qubits facilitates scaling up quantum processors by removing issues of crosstalk and heat generation. In semiconductor quantum dots, this is enabled by multi-spin qubit encodings, such as the exchange-only…
Owing to ever increasing gate fidelities and to a potential transferability to industrial CMOS technology, silicon spin qubits have become a compelling option in the strive for quantum computation. In a scalable architecture, each spin…
We investigate theoretically donor-based charge qubit operation driven by external electric fields. The basic physics of the problem is presented by considering a single electron bound to a shallow-donor pair in GaAs: This system is closely…
We present a tight-binding study of donor impurities in Si, demonstrating the adequacy of this approach for this problem by comparison with effective mass theory and experimental results. We consider the response of the system to an applied…
Donors in silicon can now be positioned with an accuracy of about one lattice constant, making it possible in principle to form donor arrays for quantum computation or quantum simulation applications. However the multi-valley character of…
Electronic spins in Silicon (Si) are rising contenders for qubits -- the logical unit of quantum computation-- owing to its outstanding spin coherence properties and compatibility to standard electronics. A remarkable limitation for spin…
A scalable quantum information processing architecture based on silicon metal-oxide-semiconductor technology is presented, combining quantum hardware elements from planar and 3D silicon-on-insulator technologies. This architecture is…
This paper presents a theoretical description of the spin distributions of fragments from low-energy induced and spontaneous nuclear fission, expressed in an analytical form. The mechanism of pumping high spin values for deformed fission…
Silicon has many attractive properties for quantum computing, and the quantum dot architecture is appealing because of its controllability and scalability. However, the multiple valleys in the silicon conduction band are potentially a…