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Atomic engineering in a solid-state material has the potential to functionalize the host with novel phenomena. STM-based lithographic techniques have enabled the placement of individual phosphorus atoms at selective lattice sites of silicon…

Mesoscale and Nanoscale Physics · Physics 2023-09-04 Mushita M. Munia , Serajum Monir , Edyta N. Osika , Michelle Y. Simmons , Rajib Rahman

Electron spin qubits in silicon, whether in quantum dots or in donor atoms, have long been considered attractive qubits for the implementation of a quantum computer due to the semiconductor vacuum character of silicon and its compatibility…

Mesoscale and Nanoscale Physics · Physics 2015-09-02 M. Urdampilleta , A. Chatterjee , C. C. Lo , T. Kobayashi , J. Mansir , S. Barraud , A. C. Betz , S. Rogge , M. F. Gonzalez-Zalba , J. J. L. Morton

We present a variational method to calculate the exchange interactions among donor clusters in a semiconductor. Such clusters are candidates for a so-called control-qubit architecture for quantum information, where the effective exchange…

Materials Science · Physics 2007-11-02 W. Wu , P. T. Greenland , A. J. Fisher

Given the effectiveness of semiconductor devices for classical computation one is naturally led to consider semiconductor systems for solid state quantum information processing. Semiconductors are particularly suitable where local control…

Materials Science · Physics 2009-11-11 A. M. Tyryshkin , J. J. L. Morton , S. C. Benjamin , A. Ardavan , G. A. D. Briggs , J. W. Ager , S. A. Lyon

We develop a theory for micro-Raman scattering by single and coupled two-donor states in silicon. We find the Raman spectra to have significant dependence on the donor exchange splitting and the relative spatial positions of the two donor…

Mesoscale and Nanoscale Physics · Physics 2009-11-07 Belita Koiller , Xuedong Hu , H. D. Drew , S. Das Sarma

Individual donors in silicon chips are used as quantum bits with extremely low error rates. However, physical realizations have been limited to one donor because their atomic size causes fabrication challenges. Quantum dot qubits, in…

We calculate the electron exchange coupling for a phosphorus donor pair in silicon perturbed by a J-gate potential and the boundary effects of the silicon host geometry. In addition to the electron-electron exchange interaction we also…

Materials Science · Physics 2009-11-10 L. M. Kettle , H. -S. Goan , Sean C. Smith , L. C. L. Hollenberg , C. J. Wellard

Recent experimental breakthroughs, particularly for single-qubit and two-qubit gates exceeding the error correction threshold, highlight silicon spin qubits as leading candidates for fault-tolerant quantum computation. In the existing…

Mesoscale and Nanoscale Physics · Physics 2023-10-30 Ranran Cai , Fang-Ge Li , Bao-Chuan Wang , Hai-Ou Li , Gang Cao , Guo-Ping Guo

Efficient scaling and flexible control are key aspects of useful quantum computing hardware. Spins in semiconductors combine quantum information processing with electrons, holes or nuclei, control with electric or magnetic fields, and…

Donors in silicon, conceptually described as hydrogen atom analogues in a semiconductor environment, have become a key ingredient of many "More-than-Moore" proposals such as quantum information processing [1-5] and single-dopant electronics…

Mesoscale and Nanoscale Physics · Physics 2015-04-07 M. Fernando Gonzalez-Zalba , André Saraiva , Dominik Heiss , Maria J. Calderón , Belita Koiller , Andrew J. Ferguson

Semiconductor architectures hold promise for quantum information processing (QIP) applications due to their large industrial base and perceived scalability potential. Electron spins in silicon in particular may be an excellent architecture…

Materials Science · Physics 2007-10-24 Charles Tahan

We present two strategies for performing two-qubit operations on the electron spins of an exchange-coupled pair of phosphorus donors in silicon, using the ability to set the donor nuclear spins in arbitrary states. The effective magnetic…

Quantum Physics · Physics 2014-06-10 Rachpon Kalra , Arne Laucht , Charles Hill , Andrea Morello

Silicon quantum dot spin qubits have become a promising platform for scalable quantum computing because of their small size and compatibility with industrial semiconductor manufacturing processes. Although Si/SiGe heterostructures are…

Solid state quantum computing proposals rely on adiabatic operations of the exchange gate among localized spins in nanostructures. We study corrections to the Heisenberg interaction between lateral semiconductor quantum dots in an external…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 V. W. Scarola , S. Das Sarma

The conduction band degeneracy in Si is detrimental to quantum computing based on spin qubits, for which a nondegenerate ground orbital state is desirable. This degeneracy is lifted at an interface with an insulator as the spatially abrupt…

Materials Science · Physics 2009-08-31 A. L. Saraiva , M. J. Calderón , Xuedong Hu , S. Das Sarma , Belita Koiller

A scalable spin-based quantum processor requires a suitable semiconductor heterostructure and a gate design, with multiple alternatives being investigated. Characterizing such devices experimentally is a demanding task, with the full…

Mesoscale and Nanoscale Physics · Physics 2022-08-04 Sathish R. Kuppuswamy , Hugo Kerstens , Chun-Xiao Liu , Lin Wang , Anton Akhmerov

We propose a scheme for quantum information processing based on donor electron spins in semiconductors, with an architecture complementary to the original Kane proposal. We show that a naive implementation of electron spin qubits provides…

Hybrid qubit systems combining electronic spins with nearby ("proximate") nuclear spin registers offer a promising avenue towards quantum information processing, with even multi-spin error correction protocols recently demonstrated in…

Quantum Physics · Physics 2015-06-16 R. Guichard , S. J. Balian , G. Wolfowicz , P. A. Mortemousque , T. S. Monteiro

While traditionally considered a deleterious effect in quantum dot spin qubits, the spin-orbit interaction is recently being revisited as it allows for rapid coherent control by on-chip AC electric fields. For electrons in bulk silicon, SOC…

Shifts from the expected nuclear magnetic resonance frequencies of antimony and bismuth donors in silicon of greater than a megahertz are observed in electrically detected magnetic resonance spectra. Defects created by ion implantation of…