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Donor-based spin qubit offers a promising silicon quantum computing route for building large-scale qubit arrays, attributed to its long coherence time and advancements in nanoscale donor placement. However, the state-of-the-art device…

Mesoscale and Nanoscale Physics · Physics 2024-12-31 Shihang Zhang , Yu He , Peihao Huang

Nuclear spin registers in the vicinity of electron spins in solid state systems offer a powerful resource to address the challenge of scalability in quantum architectures. We investigate here the properties of $^{29}$Si nuclear spins…

It has been over ten years since Kane's influential proposal for a silicon-based nuclear spin quantum computer using phosphorous donors. Since then, silicon-based architectures have been refined as the experimental challenges associated…

Quantum Physics · Physics 2009-05-26 John J. L. Morton

Silicon nanoelectronic devices can host single-qubit quantum logic operations with fidelity better than 99.9%. For the spins of an electron bound to a single donor atom, introduced in the silicon by ion implantation, the quantum information…

The errors caused by qubit displacements from their prescribed locations in an ensemble of spin chains are estimated analytically and calculated numerically for a quantum computer based on phosphorus donors in silicon. We show that it is…

Quantum Physics · Physics 2009-11-13 D. I. Kamenev , G. P. Berman , V. I. Tsifrinovich

Practical quantum computers require the construction of a large network of highly coherent qubits, interconnected in a design robust against errors. Donor spins in silicon provide state-of-the-art coherence and quantum gate fidelities, in a…

Mesoscale and Nanoscale Physics · Physics 2017-09-08 Guilherme Tosi , Fahd A. Mohiyaddin , Vivien Schmitt , Stefanie Tenberg , Rajib Rahman , Gerhard Klimeck , Andrea Morello

The ability to transport quantum information across some distance can facilitate the design and operation of a quantum processor. One-dimensional spin chains provide a compact platform to realize scalable spin transport for a solid-state…

Mesoscale and Nanoscale Physics · Physics 2016-08-17 Fahd A. Mohiyaddin , Rachpon Kalra , Arne Laucht , Rajib Rahman , Gerhard Klimeck , Andrea Morello

We study exchange coupling in Si double quantum dots, which have been proposed as suitable candidates for spin qubits due to their long spin coherence times. We discuss in detail two alternative schemes which have been proposed for…

Mesoscale and Nanoscale Physics · Physics 2010-02-12 Qiuzi Li , Lukasz Cywinski , Dimitrie Culcer , Xuedong Hu , S. Das Sarma

Dopant atoms are ubiquitous in semiconductor technologies, providing the tailored electronic properties that underpin the modern digital information era. Harnessing the quantum nature of these atomic-scale objects represents a new and…

Quantum Physics · Physics 2020-09-10 Andrea Morello , Jarryd J. Pla , Patrice Bertet , David N. Jamieson

Semiconductor spin qubits combine excellent quantum performance with the prospect of manufacturing quantum devices using industry-standard metal-oxide-semiconductor (MOS) processes. This applies also to ion-implanted donor spins, which…

We present a systematic and realistic simulation for single and double phosphorous donors in a silicon-based quantum computer design. A two-valley equation is developed to describe the ground state of phosphorous donors in strained silicon…

Mesoscale and Nanoscale Physics · Physics 2009-11-11 Angbo Fang , Yia-Chung Chang , J. R. Tucker

Donor spin in silicon have achieved record values of coherence times and single-qubit gate fidelities. The next stage of development involves demonstrating high-fidelity two-qubit logic gates, where the most natural coupling is the exchange…

Mesoscale and Nanoscale Physics · Physics 2021-08-11 Benjamin Joecker , Andrew D. Baczewski , John K. Gamble , Jarryd J. Pla , André Saraiva , Andrea Morello

We theoretically consider coherence times for spins in two quantum computer architectures, where the qubit is the spin of an electron bound to a P donor impurity in Si or within a GaAs quantum dot. We show that low temperature decoherence…

Mesoscale and Nanoscale Physics · Physics 2009-11-07 Rogerio de Sousa , S. Das Sarma

Donor impurity spins in silicon-28 are highly competitive qubits for upcoming solid-state quantum technologies, yet a proven scalable strategy for multi-qubit devices remains conspicuously absent. These CMOS-compatible, atomically identical…

We propose a method to electrically control electron spins in donor-based qubits in silicon. By taking advantage of the hyperfine coupling difference between a single-donor and a two-donor quantum dot, spin rotation can be driven by…

Mesoscale and Nanoscale Physics · Physics 2017-03-17 Yu Wang , Chin-Yi Chen , Gerhard Klimeck , Michelle Y. Simmons , Rajib Rahman

We unravel theoretically a key intrinsic relaxation mechanism among the low-lying singlet and triplet donor-pair states in silicon, an important element in the fast-developing field of spintronics and quantum computation. Despite the…

Mesoscale and Nanoscale Physics · Physics 2017-10-04 Yang Song , S. Das Sarma

Scalable quantum processors require high-fidelity universal quantum logic operations in a manufacturable physical platform. Donors in silicon provide atomic size, excellent quantum coherence and compatibility with standard semiconductor…

Silicon is the foundation of current information technology, and a promising platform for future quantum information technology as silicon-based qubits exhibit some of the longest coherence times in solid-state. At the same time, silicon is…

We analyze several important issues for the single- and two-qubit operations in Si quantum computer architectures involving P donors close to a SiO2 interface. For a single donor, we investigate the donor-bound electron manipulation (i.e.…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 M. J. Calderon , Belita Koiller , S. Das Sarma

We predict a gigantically long lifetime of the first excited state of an interstitial lithium donor in silicon. The nature of this effect roots in the anomalous level structure of the {\em 1s} Li manifold under external stress. Namely, the…

Quantum Physics · Physics 2009-11-10 V. N. Smelyanskiy , A. G. Petukhov , V. V. Osipov