Related papers: Universal shapes of self-organized semiconductor q…
Semiconductor nanowires can be utilized to create quantum dot qubits. The formation of quantum dots is typically achieved by means of bottom gates created by a lift-off process. As an alternative, we fabricated flat buried bottom gate…
Site-controlled quantum dots formed during the deposition of (Al)GaAs layers by metalorganic vapor-phase epitaxy on GaAs(111)B substrates patterned with inverted pyramids result in geometric and compositional self-ordering along the…
We report highly tunable control of holes in Ge/Si core/shell nanowires (NWs). We demonstrate the ability to create single quantum dots (QDs) of various sizes, with low hole occupation numbers and clearly observable excited states. For the…
The size distribution of self-assembled InAs quantum dots grown on (001) InP under the Stranski-Krastanow growth mode is controlled using selective area/chemical beam epitaxy, which allows the formation of quantum dots at specific…
Arrays of hybrid metal-semiconductor islands offer a new approach to quantum simulation, with key advantages over arrays of conventional quantum dots. Because the metallic component of these hybrid islands has a quasi-continuous level…
We have studied theoretically the type-II GaAsSb capped InAs quantum dots for two structures differing in the composition of the capping layer, being either (i) constant or (ii) with Sb accumulation above the apex of the dot. We have found…
We present measurements of silicon (Si) metal-oxide-semiconductor (MOS) nanostructures that are fabricated using a process that facilitates essentially arbitrary gate geometries. Stable Coulomb blockade behavior free from the effects of…
Nanostructures in InAs quantum wells have so far remained outside of the scope of traditional microfabrication techniques based on etching. This is due to parasitic parallel conduction arising from charge carrier accumulation at the…
The two- to three-dimensional growth transition in the InAs/GaAs(001) heterostructure has been investigated by atomic force microscopy. The kinetics of the density of three dimensional quantum dots evidences two transition thresholds at…
Coupling of atoms is the basis of chemistry, yielding the beauty and richness of molecules. We utilize semiconductor nanocrystals as artificial atoms to form nanocrystal molecules that are structurally and electronically coupled. CdSe/CdS…
This work presents some fundamental features of pyramidal site-controlled InGaAs Quantum Dots (QDs) grown by MetalOrganic Vapour Phase Epitaxy on patterned GaAs (111)B substrate. The dots self-form inside pyramidal recesses patterned on the…
Spin qubits in semiconductor quantum dots represent a prominent family of solid-state qubits in the effort to build a quantum computer. They are formed when electrons or holes are confined in a static potential well in a semiconductor,…
Dense arrays of semiconductor quantum dots are currently employed in highly efficient quantum dot lasers for data communications and other applications. Traditionally, the electronic properties of such quantum nanostructures have been…
We report on a combined photoluminescence imaging and atomic force microscopy study of single, isolated self-assembled InAs quantum dots (density <0.01 um^(-2) capped by a 95 nm GaAs layer, and emitting around 950 nm. By combining optical…
The epitaxial growth of germanium on silicon leads to the self-assembly of SiGe nanocrystals via a process that allows the size, composition and position of the nanocrystals to be controlled. This level of control, combined with an inherent…
Strain-free GaAs/AlGaAs semiconductor quantum dots (QDs) grown by droplet etching and nanohole infilling (DENI) are highly promising candidates for the on-demand generation of indistinguishable and entangled photon sources. The…
Colloidal nanoplatelets - quasi-two-dimensional sheets of semiconductor exhibiting efficient, spectrally pure fluorescence - form when liquid-phase syntheses of spherical quantum dots are modified. Despite intense interest in their…
Epitaxial semiconductor-superconductor hybrid materials are an excellent basis for studying mesoscopic and topological superconductivity, as the semiconductor inherits a hard superconducting gap while retaining tunable carrier density.…
Remarkable progress towards realizing quantum computation has been achieved using natural and artificial atoms as qubits. This article presents a brief overview of the current status of different types of qubits. On the one hand, natural…
We propose the use of quantum dots formed in a semiconductor nanocolumn for the realization of charge or spin based quantum bits. The radial carrier confinement is achieved by employing conformal overgrowth, while multiple segmented gates…