Related papers: Spin injection and detection by resonant tunneling…
Scattering theory is employed to derive a Landauer-type formula for the spin and the charge currents, through a finite region where spin-orbit interactions are effective. It is shown that the transmission matrix yields the spatial direction…
The spin-polarized transport is investigated in a new type of magnetic tunnel junction which consists of two ferromagnetic electrodes separated by a magnetic barrier and a nonmagnetic metallic spacer. Based on the transfer matrix method and…
We show that noncollinear Andreev reflections can be induced at interfaces of semiconductor nanowires with spin-orbit coupling, Zeeman splitting and proximity-induced superconductivity. In a noncollinear local Andreev reflection, the spin…
Current-voltage characteristics of a spintromechanical device, in which spin-polarized electrons tunnel between magnetic leads with anti-parallel magnetization through a single level movable quantum dot, are calculated. New exchange- and…
We develop a theoretical description of transport through quantum dots connected to reservoirs via spin-polarized ballistic contacts. Rate equations account for spin accumulation inside the dot, electron-electron interactions, and…
This article reviews spin-dependent transport of carriers in homogenous three-dimensional and two-dimensional semiconductors. We begin with a discussion of optical orientation of electron spins, which allows both the creation and detection…
A theory of spin-polarized electron transport in ferromagnet-semiconductor heterostructures, based on a unified semiclassical description of ballistic and diffusive transport in semiconductors, is outlined. The aim is to provide a framework…
We study the spin dependent tunneling of electrons through a zinc-blende semiconductor with the indirect X (or D) minimum serving as the tunneling barrier. The basic difference between tunneling through the G vs. the X barrier is the…
The high efficiency of a tunnel magnetic transistor as a source of spin-polarized electrons has been proven recently [X. Jiang {\it et al.}, Phys. Rev. Lett. {\bf 90}, 256603 (2003)]. A concept of this device based on an active group of hot…
Magnetic $p$-$n$ junction diodes are fabricated to investigate spin-polarized electron transport. The injection of spin-polarized electrons in a semiconductor is achieved by driving a current from a ferromagnetic injector (Fe), into a bulk…
We report experimental evidence of excitonic spin-splitting, in addition to the conventional Zeeman effect, produced by a combination of the Rashba spin-orbit interaction, Stark shift and charge screening. The electric-field-induced…
Spin-dependent partial conductances are evaluated in a tight-binding description of electron transport in the presence of spin-orbit (SO) couplings, using transfer-matrix methods. As the magnitude of SO interactions increases, the…
Electrical injection and detection of spin-polarized electrons is demonstrated for the first time in a single wafer, all-semiconductor, GaAs-based lateral spintronic device, employing p+-(Ga,Mn)As/n+-GaAs ferromagnetic Esaki diodes as spin…
A device enabling mechanically-controlled spin and electric transport in mesoscopic structures is proposed. It is based on the transfer of electrons through weak links formed by suspended nanowires, on which the charge carriers experience a…
Topological nodal-line semimetals are predicted to exhibit unique drumhead-like surface states (DSS). Yet, a direct detection of such states remains a challenge. Here, we propose spin-resolved transport in a junction between a normal metal…
We study spin-dependent interband resonant tunneling in double-barrier InAs/AlSb/ GaMnSb heterostructures. We demonstrate that these structures can be used as spin filters utilizing spin-selective tunneling of electrons through the…
Introducing spin-polarized carriers in semiconductor lasers reveals an alternative path to realize room-temperature spintronic applications, beyond the usual magnetoresistive effects. Through carrier recombination, the angular momentum of…
We explore electrically injected, spin polarized transport in a ballistic two-dimensional electron gas. We augment the Buettiker-Landauer picture with a simple, but realistic model for spin-selective contacts to describe multimode…
Efficient conversion of a spin signal into an electric voltage in mainstream semiconductors is one of the grand challenges of spintronics. This process is commonly achieved via a ferromagnetic tunnel barrier where non-linear electric…
We show that the accumulation of spin-polarized electrons at a forward-biased Schottky tunnel barrier between Fe and n-GaAs can be detected electrically. The spin accumulation leads to an additional voltage drop across the barrier that is…