Related papers: Probing Spin-Polarized Currents in the Quantum Hal…
A theory of collective states in a magnetically quantized two-dimensional electron gas (2DEG) with half-filled Landau level (quantized Hall ferromagnet) in the presence of magnetic 3d impurities is developed. The spectrum of bound and…
The combination of x-ray spectroscopy methods complemented with theoretical analysis unravels the coexistence of paramagnetic and antiferromagnetic phases in the Zn_0.9Mn_0.1O shell deposited onto array of wurtzite ZnO nanowires. The shell…
Tunnelling density of states in the vicinity of Fermi level of a two-dimensional electron gas subjected to an external parallel and zeroth magnetic field is calculated. It reveals a pseudo-gap recently observed in the experiments. The gap…
We investigate the behavior of spin polarized currents in two-dimensional topological insulators (TI). Stationary solutions inside a HgTe/CdTe quantum well (QW) were obtained by Bernevig-Hughes-Zhang (BHZ) model modified by a electric and…
We have studied the effects of Mn concentration on the ballistic spin-polarized transport through diluted magnetic semiconductor heterostructures with a single paramagnetic layer. Using a fitted function for zero-field conduction band…
We report on an absolute measurement of the electronic spin polarization of the $\nu=1$ integer quantum Hall state. The spin polarization is extracted in the vicinity of $\nu=1$ (including at exactly $\nu=1$) via resistive NMR experiments…
The spin filtering effect of the electron current in a double-barrier resonant-tunneling diode (RTD) consisting of ZnMnSe semimagnetic layers has been studied theoretically. The influence of the distribution of the magnesium ions on the…
In the ballistic regime we study both semiclassically and quantum mechanically the electron's dynamics in two-dimensional electron gas (2DEG) in the presence of an inhomogeneous magnetic field applied perpendicular to the plane. The…
Experiments on a nearly spin degenerate two-dimensional electron system reveals unusual hysteretic and relaxational transport in the fractional quantum Hall effect regime. The transition between the spin-polarized (with fill fraction $\nu =…
Here, we report an alternative route to achieve two dimensional electron gas (2DEG) in a semiconductor structure. It has been shown that charge accumulation on the side facets can lead to the formation of 2DEG in a network of c-axis…
Spin splitting in the integer quantum Hall effect is investigated for a series of Al$_{x}$Ga$_{1-x}$As/GaAs heterojunctions and quantum wells. Magnetoresistance measurements are performed at mK temperature to characterize the electronic…
In zero magnetic field, conductance measurements of clean one-dimensional (1D) constrictions defined in GaAs/AlGaAs heterostructures show twenty-six quantized ballistic plateaux, as well as a structure close to $0.7(2e^2/h)$. In an in-plane…
Double layer two-dimensional electron systems at high perpendicular magnetic field are used to realize magnetic tunnel junctions in which the electrons at the Fermi level in the two layers have either parallel or anti-parallel spin…
We characterize the role of the spin-orbit coupling between electrons and the confining potential of the edge in nonequilibrium 2D homogeneous electronic gas. We derive a simple analytical result for the magnitude of the current induced…
Using low-temperature scanning tunneling spectroscopy applied to the Cs-induced two-dimensional electron system (2DES) on p-type InSb(110), we probe electron-electron interaction effects in the quantum Hall regime. The 2DES is decoupled…
We present longitudinal and Hall magneto-resistance measurements of a ``magnetic'' two-dimensional electron gas (2DEG) formed in modulation-doped Zn$_{1-x-y}$Cd$_{x}$Mn$_{y}$Se quantum wells. The electron spin splitting is temperature and…
Quantum Hall ferromagnetic transitions are typically achieved by increasing the Zeeman energy through in-situ sample rotation, while transitions in systems with pseudo-spin indices can be induced by gate control. We report here a…
Successful incorporation of the spin degree of freedom in semiconductor technology requires the development of a new paradigm allowing for a scalable, non-destructive electrical detection of the spin-polarization of injected charge carriers…
Using a `standard' NMR spin-echo technique we determined the spin polarization of two-dimensional electrons, confined to GaAs quantum wells, from the hyperfine shift of Ga nuclei in the wells. Concentrating on the temperature and magnetic…
We report the experimental observation of the spin-Hall effect in a two-dimensional (2D) hole system with Rashba spin-orbit coupling. The 2D hole layer is a part of a p-n junction light-emitting diode with a specially designed co-planar…