Related papers: Low temperature field-effect in crystalline organi…
We report transport measurements, including: Hall, Seebeck and Nernst Effect. All these transport properties exhibit anomalous field and temperature dependences, with a change of behavior observed at about H 1.5T and T 15K. We were able to…
One of the salient features of graphene is the very high carrier mobility that implies tremendous potential for use in electronic devices. Unfortunately, transport measurements find the expected high mobility only in freely suspended…
The electron transport in inhomogeneous quasi-one-dimensional conducting channels on the liquid helium surface are studied in the temperature range 0.6-1.5 K. Inhomogeneities are created by charging the substrate on which the conducting…
We report on a systematic study of strain effects on the transport properties and the ferromagnetic transition temperature $T_{c}$ of high-quality La$_{0.9}$Sr$_{0.1}$MnO$_{3}$ thin films epitaxially grown on (100) SrTiO$_{3}$ substrates.…
Crystalline organic semiconductors, bonded by weak van der Waals forces, exhibit macroscopic properties that are very similar to those of inorganic semiconductors. While there are many open questions concerning the microscopic nature of…
We report on electronic-structure calculations for the pentacene and rubrene crystals, based on experimental crystal geometries measured at different temperatures. The results are in very good agreement with angle-resolved photoelectron…
A large number of non-adiabatic dynamical studies have been applied to reveal the nature of carrier transport in organic semiconductors with different approximations. We present here a "nearly exact" graphical process unit (GPU) based…
Magneto-transport measurements were performed on surface conducting hydrogen-terminated diamond (100) hall bars at temperatures between 0.1-5 K in magnetic fields up to 8T.
There has recently been significant interest in rubrene single-crystals grown using physical vapour transport techniques due to their application in high-mobility organic field-effect transistor (OFET) devices. Despite numerous studies of…
We fabricated NiFe$_\textrm{2}$O$_\textrm{x}$ thin films on MgAl$_2$O$_4$(001) substrates by reactive dc magnetron co-sputtering varying the oxygen partial pressure during deposition. The fabrication of a variable material with oxygen…
Recent demonstrations of inverted thermal activation of charge mobility in polymer field-effect transistors have excited the interest in transport regimes not limited by thermal barriers. However, rationalization of the limiting factors to…
Ge$_{2}$Sb$_{2}$Te$_{5}$ (GST) has been widely used as a popular phase change material. In this study, we show that it exhibits high Seebeck coefficients 200 - 300 $\mu$V/K in its cubic crystalline phase ($\it{c}$-GST) at remarkably high…
The temperature $T$ and magnetic field $H$ dependence of the resistivity $\rho$ has been measured for La$_{0.8-y}$Sr$_{0.2}$MnO$_{3}$ (y=0 and 0.128) films grown on (100) SrTiO$_{3}$ substrates. The low-temperature $\rho$ in the…
Transport properties of a single-channel Luttinger liquid impinging on a barrier have been studied for $g=1/2 - \epsilon$, where $g$ is the dimensionless interaction constant and $|\epsilon| \ll 1$. The relevant diagrams contributing to the…
Two-dimensional (2D) materials represented by graphene stand out in future electrical industry and have been widely studied. As a commonly existing factor in electronic devices, the electric field has been extensively utilized to modulate…
Effective electron mobilities are obtained by transport measurements on InAs nanowire field-effect transistors at temperatures ranging from 10-200 K. The mobility increases with temperature below ~ 30 - 50 K, and then decreases with…
We report a highly unusual temperature dependence in the magnetoresistance of a weakly interacting high mobility 2D electron gas (2DEG) under a parallel magnetic field and when the current is perpendicular to the field. While the linear…
We report on the fabrication and characterization of single crystal field-effect transistors (FETs) based on diphenylbenzo diselenophene (DPh-BDSe). These organic field-effect transistors (OFETs) function as p-channel accumulation-mode…
Controlling thermal energy transfer at the nanoscale has become critically important in many applications and thermal properties since it often limits device performance. In this work, we study the effects on thermal conductivity arising…
We investigate rubrene single-crystal field-effect transistors, whose stability and reproducibility are sufficient to measure systematically the shift in threshold voltage as a function of channel length and source-drain voltage. The shift…