Related papers: Non-collinear magnetic structures: a possible caus…
Cotunneling transport through quantum dots weakly coupled to non-collinearly magnetized leads is analyzed theoretically by means of the real-time diagrammatic technique. The electric current, dot occupations, and dot spin are calculated in…
Flexible control of magnetization switching by electrical manners is crucial for applications of spin-orbitronics. Besides of a switching current that is parallel to an applied field, a bias current that is normal to the switching current…
We have found that the current rectification effect in triple layer (double barrier) (Ga,Mn)As magnetic tunnel junctions strongly depends on the magnetization alignment. The direction as well as the amplitude of the rectification changes…
Interfacing a ferromagnet with a polarized ferroelectric gate generates a non-uniform, interfacial spin density coupled to the ferroelectric polarization allowing so for an electric field control of effective transversal field to…
The longitudinal transport problem (the current is applied parallel to some bias magnetic field) in type-II superconductors is analyzed theoretically. Based on analytical results for simplified configurations, and relying on numerical…
The transport properties of a twisted bilayer graphene barrier are investigated for various twist angles. Remarkably, for small twist angles around the magic angle $\theta_m \sim 1.05^{\circ}$, the local currents around the AA-stacked…
Aiming to clarify the mechanisms governing the interlayer magnetic coupling, we have investigated the stacking energy and interlayer magnetism of bilayer CrBr$_3$ systemically. The magnetic ground states of bilayer CrBr$_3$ with different…
We examine the anomalous inverse spin switch behavior in La$_{0.7}$Ca$_{0.3}$MnO$_3$ (LCMO)/YBa$_2$Cu$_3$O$_{7-\delta}$ (YBCO)/LCMO trilayers by combined transport studies and polarized neutron reflectometry. Measuring magnetization…
The structural and magnetic properties of functional Ni-Mn-Z (Z = Ga, In, Sn) Heusler alloys are studied by first-principles and Monte Carlo methods. The \textit{ab initio} calculations give a basic understanding of the underlying physics…
Spin-orbit torques induced by spin Hall and interfacial effects in heavy metal/ferromagnetic bilayers allow for a switching geometry based on in-plane current injection. Using this geometry, we demonstrate deterministic magnetization…
Finite-temperature micromagnetics simulations are employed to study the magnetization-switching dynamics driven by a field applied at an angle to the long axis of an iron nanopillar. A bi-modal distribution in the switching times is…
Magnetization dynamics, which determine the speed of magnetization switching and spin information propagation, play a central role in modern spintronics. Gaining its control will satisfy the different needs of various spintronic devices. In…
Using the Kubo formalism, the magnetic properties of the system in the linear regime have been investigated. Mainly the effect of non-magnetic substrate on the spin susceptibility is calculated. Results show that the Rashba coupling…
The pressure-driven insulator-metal transition is a crucial topic in condensed matter physics. However, even for the prototypical strongly correlated system, NiO, the critical pressure for transition remains debated. In this work, we…
We consider the inverse problem of determining the time dependent magnetic field of the Schr\"odinger equation in a bounded open subset of $R^n$, with $n \geq 1$, from a finite number of Neumann data, when the boundary measurement is taken…
Motivated by recent experimental studies of thin-film devices containing a single ferromagnetic layer, we develop a quantum kinetic theory of current-induced magnetic torques in Rashba-model ferromagnets. We find that current-induced…
Detailed mean field and Monte Carlo studies of the dynamic magnetization-reversal transition in the Ising model in its ordered phase under a competing external magnetic field of finite duration have been presented here. Approximate…
I consider the quantum interference of electrons moving along knotted trajectories under external magnetic field. The induced persistent current is formulated in terms of characteristic parameters that classify the torus knot geometry. The…
Resistive switching devices emerged a huge amount of interest as promising candidates for non-volatile memories as well as artificial synapses due to their memristive behavior. The main physical and chemical phenomena which define their…
Recent experimental and theoretical studies show that the switching behavior of magnetic nanoparticles can be well controlled by external time-dependent magnetic fields. In this work, we inspect theoretically the influence of the…