Related papers: Conductance modulation in spin field-efect transis…
We report experimental evidence of excitonic spin-splitting, in addition to the conventional Zeeman effect, produced by a combination of the Rashba spin-orbit interaction, Stark shift and charge screening. The electric-field-induced…
We explore the impact of a Rashba-type spin-orbit interaction in the conduction band on the spin dynamics of hot excitons in diluted magnetic semiconductor quantum wells. In materials with strong spin-orbit coupling, we identify parameter…
The spin transport characteristics of a nanowire directional electronic coupler have been evaluated theoretically via a transfer matrix approach. The application of a gate field in the region of mixing allows for control of spin current…
Current-voltage characteristics of a spintromechanical device, in which spin-polarized electrons tunnel between magnetic leads with anti-parallel magnetization through a single level movable quantum dot, are calculated. New exchange- and…
We apply an analysis of time-dependent spin-polarized current in a semiconductor channel at room temperature to establish how the magnetization configuration and dynamics of three ferromagnetic terminals, two of them biased and third…
Quasi--one dimensional edge channels are formed at the boundary of a two-dimensional electron system subject to a strong perpendicular magnetic field. We consider the effect of Rashba spin--orbit coupling, induced by structural inversion…
We present a theoretical study of a spin field-effect transistor realized in a quantum well formed in a p--doped ferromagnetic-semiconductor- nonmagnetic-semiconductor-ferromagnetic-semiconductor hybrid structure. Based on an…
The upper critical field in type II superconductors is limited by the Pauli paramagnetic limit. In superconductors with strong Rashba spin-orbit coupling this limit can be overcome by forming a helical state. Here we quantitatively study…
In this work, we show that in a four-quantum-dot ring, via introducing a local Rashba spin-orbit interaction the spin bias in the transverse terminals can be detected by observing the charge currents in the longitudinal probes. It is found…
We present a theoretical model that describes electrical spin-detection at a ferromagnet/semiconductor interface. We show that the sensitivity of the spin detector has strong bias dependence which, in the general case, is dramatically…
We calculate spin Hall conductivities in the two dimensional electron systems with Rashba spin-orbit interaction. The salient feature is that, apart from the usual spin-Hall conductivity \sigma^z_{xy} which corresponds to the induction of…
A spin version of transistor, where magnetism is used to influence electrical behaviors of the semiconductor, has been a long-pursued device concept in spintronics. In this work, we experimentally study a field-effect transistor with CrSBr,…
We present semiclassical and quantum mechanical results for the effects of a strong magnetic field in Quantum Wires in the presence of Rashba Spin Orbit coupling. Analytical and numerical results show how the perturbation acts in the…
The Rashba effect is one of the most striking manifestations of spin-orbit coupling in solids, and provides a cornerstone for the burgeoning field of semiconductor spintronics. It is typically assumed to manifest as a momentum-dependent…
Spin-orbit interaction (SOI) offers a nonferromagnetic scheme to realize spin polarization through utilizing an electric field. Electrically tunable SOI through electrostatic gates have been investigated, however, the relatively weak and…
Manipulating the electron spin with the aid of spin-orbit coupling (SOC) is an indispensable element of spintronics. Electrostatically gating a material with strong SOC results in an effective magnetic field which can in turn be used to…
A possibility of controlled manipulation of electron spin states has been investigated for a cylindrical two-dimensional electron gas confined in a semiconductor nanotube/cylindrical nanowire with the Rashba spin-orbit interaction. We…
A dual mode device behaving either as a field-effect transistor or a single electron transistor (SET) has been fabricated using silicon-on-insulator metal oxide semiconductor technology. Depending on the back gate polarisation, an electron…
We evaluate the distribution of Hall conductances in magnetic subbands of two-dimensional electron gas with Rashba spin-orbit (SO) coupling placed in a periodic potential and perpendicular magnetic field. In this semiconductor structure the…
Spin accumulation voltages in a non-degenerate Si spin valve are discussed quantitatively as a function of electric bias current using systematic experiments and model calculations. As an open question in semiconductor spintronics, the…