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Related papers: Field-Induced Resistive Switching in Metal-Oxide I…

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Ferroelastic materials (materials with switchable spontaneous strain) often are centrosymmetric, but their domain walls are always polar, as their internal strain gradients cause polarization via flexoelectricity. This polarization is…

Materials Science · Physics 2025-03-11 Guangming Lu , Gustau Catalan , Ekhard K. H. Salje

Investigation of the inherent field-driven charge transport behaviour of 3D lead halide perovskites has largely remained a challenging task, owing primarily to undesirable ionic migration effects near room temperature. In addition, the…

We propose a method of controlling the metal-insulator transition of one perovskite material at its interface with a another ferroelectric material based on first principle calculations. The operating principle is that the rotation of…

Materials Science · Physics 2016-03-11 Xu He , Kui-juan Jin , Chen Ge , Zhong-shui Ma , Guo-zhen Yang

We demonstrate that switching of ferroelectric thin-films sandwiched between metallic electrodes can be controlled by laser-assisted heating, reminiscent of heat-assisted magnetic recording. We employ electrical switching cycles that…

Heterointerfaces have been pivotal in unveiling extraordinary interfacial properties and enabling multifunctional material platforms. Despite extensive research on all-oxide interfaces, heterointerfaces between different material classes,…

Using first-principles calculations, we predict that tunable ferroelectricity can be realized in oxide perovskites with the Grenier structure and ordered oxygen vacancies. Specifically, we show that $R_{1/3}A_{2/3}\mathrm{FeO}_{2.67}$…

Materials Science · Physics 2023-07-12 Yongjin Shin , Giulia Galli

An abrupt metal-insulator transition (MIT) was observed in VO2 thin films during the application of a switching voltage pulse to two-terminal devices. Any switching pulse over a threshold voltage for the MIT of 7.1 V enabled the device…

Strongly Correlated Electrons · Physics 2009-11-11 Byung-Gyu Chae , Hyun-Tak Kim , Doo-Hyeb Youn , Kwang-Yong Kang

Transition-metal-dichalcogenides own a variety of structures as well as electronic properties which can be modulated by structural variations, element substitutions, ion or molecule intercalations, etc. However, there is very limited…

Transition metal oxides hold great potential for the development of new device paradigms because of the field-tunable functionalities driven by their strong electronic correlations, combined with their earth abundance and environmental…

Memristive devices have gained significant attention for their potential in next-generation non-volatile memory and neuromorphic computing architectures. Among emerging candidates, transition metal oxides have proven particularly promising.…

Materials Science · Physics 2026-05-29 Ashutosh Krishna Amaram , Aditya Koneru , Subramanian KRS Sankaranarayanan

The active tuning of the structural colour in photonic crystals by an electric field represents an effective external stimulus with impact on light transmission manipulation. In this work we present this effect in a photonic crystal device…

We investigate the two-pulse photon echo response of excitons in the mixed lead halide perovskite crystal \sample in dependence on the excitation intensity and polarization of the incident laser pulses. Using spectrally narrow picosecond…

We studied the weak field Hall voltage in 2D electron layers in Si-MOS structures with different mobilities, through the metal-insulator transition. In the vicinity of the critical density on the metallic side of the transition, we have…

Strongly Correlated Electrons · Physics 2009-10-31 V. M. Pudalov , G. Brunthaler , A. Prinz , G. Bauer

The temperature-dependent phase transitions in Ruddlesden-Popper oxides with perovskite bilayers have been under increased scrutiny in recent years due to the so-called hybrid improper ferroelectricity that some chemical compositions…

Materials Science · Physics 2021-12-08 Gabriel Clarke , Dominik Daisenberger , X. Luo , S. W. Cheong , Nicholas C. Bristowe , Mark S. Senn

The (001) surfaces of polar perovskites BaTiO$_3$ and PbTiO$_3$ have been studied from first principles at T=0 K. For both cases of polarization, the most stable TiO-terminated interfaces show intrinsic ferroelectricity. In the topmost…

Materials Science · Physics 2008-03-12 M. Fechner , S. Ostanin , I. Mertig

Halide perovskite semiconductors respond to electric fields in a way that varies across time and length scales. We discuss the microscopic processes that give rise to the macroscopic polarization of these materials, ranging from the optical…

Materials Science · Physics 2018-12-04 Jacob N. Wilson , Jarvist M. Frost , Suzanne K. Wallace , Aron Walsh

Transition-metal perovskite oxides exhibit moderately correlated metallic phases, several of which exhibit a $T^2$ resistivity scaling up to temperatures far exceeding the regime where Fermi-liquid electron-electron scattering is expected…

Materials Science · Physics 2026-04-02 Jennifer Coulter , Fabian B. Kugler , Harrison LaBollita , Antoine Georges , Cyrus E. Dreyer

Laser processing has been used to create weakly conducting tracks in polyimide film. Raman spectroscopy shows that these tracks consist of nanometre sized graphitic regions contained in a carbon-rich matrix. The measured temperature…

Applied Physics · Physics 2024-01-22 Melanie Whitfield , Larry Yip , Stuart Speakman , David Hasko

Large bipolar strain of up to 0.36% (peak-to-peak value) was measured in BiFeO3 ceramics at low frequency (0.1 Hz) and large amplitude (140 kV/cm) of the driving field. This strain is comparable to that achievable in highly efficient…

Materials Science · Physics 2011-12-06 Tadej Rojac , Marija Kosec , Dragan Damjanovic

Epitaxial superlattices of ferromagnetic/paramagnetic La$_{0.67}$Sr$_{0.33}$MnO$_3$/SrIrO$_3$ materials have been prepared on SrTiO$_3$ (100) substrate using pulse laser deposition technique. An unexpected onset of interface magnetic…

Strongly Correlated Electrons · Physics 2019-05-08 Rachna Chaurasia , K. C. Kharkwal , A. K. Pramanik