Related papers: Ellipsometric detection of transitional surface st…
The energetically optimal position of lattice defects on intrinsically curved surfaces is a complex function of shape parameters. For open surfaces, a simple condition predicts the critical size for which a central disclination yields lower…
Disordered metasurfaces provide a versatile platform for harnessing near- and far-field scattered light. Most research has focused on either particulate topologies composed of individual, well-identified metaatoms or, to a lesser extent,…
Diffusion of Ga adatom at the As rich, low temperature c(4$\times$4) reconstructions of GaAs(001) surface is analyzed. We use known energy landscape for the motion of Ga adatom at two different $\alpha$ and $\beta$ surface phases to…
The epitaxial growth of complex oxide thin films provide three avenues to generate unique properties: the ability to influence the 3-dimensional structure of the film, the presence of a surface, and the generation of an interface. In all…
We present a systematic theoretical investigation of the surface properties, stability and reactivity, of rock-salt type alkaline-earth metal oxides including MgO, CaO, SrO, and BaO. The accuracy of commonly used exchange-correlation…
We investigate the electronic structure of the c(4 x 2) reconstructed Ge(001) surface using band structure calculations based on density functional theory and the generalized gradient approximation. In particular, we take into account the…
Small numbers of nitrogen dopants dramatically modify the electronic properties of GaAs, generating very large shifts in the conduction-band energies with nonlinear concentration dependence, and impurity-associated spatially-localized…
The approach to calculating the effective dielectric and magnetic response in bounded composite materials is developed. The method is essentially based on the renormalisation of the dielectric matrix parameters to account for the surface…
A time-dependent no-recrossing dividing surface is shown to lead to a new criterion for identifying reactive trajectories well before they are evolved to infinite time. Numerical dynamics simulations of a dissipative anharmonic…
We present the results of the modelling of CO adsorption and catalytic CO oxidation on inhomogeneous Pt(100) surfaces which contain structurally different areas. These areas are formed during the CO-induced transition from a reconstructed…
Iron-based compounds (IBS) display a surprising variety of superconducting properties that seems to arise from the strong sensitivity of these systems to tiny details of the lattice structure. In this respect, systems that become…
Ellipsometry is a powerful and well-established optical technique used in the characterisation of materials. It works by combining the components of elliptically polarized light in order to draw information about the optical system. We…
Reflectionless-tunneling was observed in Nb/GaAs superconductor/semiconductor junctions fabricated through a two-step procedure. First, periodic $\delta$-doped layers were grown by molecular beam epitaxy near the GaAs surface, followed by…
In plasma X ray photoelectron spectroscopy emerges as a powerful platform for real time, in situ chemical analysis under conditions relevant to semiconductor processing and other plasma enabled technologies. This study investigates the…
Mn-doped GaAs nanowires were grown in the self-catalytic growth mode on oxidized Si(100) surface by molecular beam epitaxy and characterized by scanning and transmission electron microscopy, Raman scattering, photoluminescence,…
Reflection high-energy electron diffraction (RHEED) is a powerful tool in molecular beam epitaxy (MBE), but RHEED images are often difficult to interpret, requiring experienced operators. We present an approach for automated surveillance of…
We consider an $\varepsilon$-periodic ($\varepsilon\to 0$) tubular structure, modelled as a magnetic Laplacian on a metric graph, which is periodic along a single axis. We show that the corresponding Hamiltonian admits norm-resolvent…
The morphological evolution and the effect of growth temperature on size, orientation and composition of molecular beam epitaxy grown Ge-Si islands on Si(5 5 12) surfaces have been investigated in the temperature range from room temperature…
We use a combined generalized spectroscopic ellipsometry and density functional theory approach to determine and analyze the anisotropic dielectric functions of an $\alpha$-Ga$_2$O$_3$ thin film. The sample is grown epitaxially by…
Thin Ge layers deposited on Si(105) form a stable single-domain film structure with large terraces and rebonded-step surface termination, thus realizing an extended and ordered Ge/Si planar hetero-junction. At the coverage of four Ge…