Related papers: Electron Dephasing in Mesoscopic Metal Wires
This lecture note reviews a variety of transport and thermodynamic measurements of electron decoherence time in low-dimensional conductors at low temperature. The mechanism of dephasing by electron interaction mediated by an arbitrarily…
Spin-flip scattering of charge carriers in metals with magnetic defects leads to the low-temperature saturation of the decoherence time, $\tau_\varphi$, of electrons at the value comparable to their spin relaxation time, $\tau_s$. In…
The electron dephasing time $\tau_{\phi}$ in a diffusive quantum dot is calculated by considering the interaction between the electron and dynamical defects, modelled as two-level system. Using the standard tunneling model of glasses, we…
We have measured the low-field magnetoresistances (MRs) of a series of Sn-doped indium oxide thick films in the temperature $T$ range 4--35 K. The electron dephasing rate $1/\tau_{\varphi}$ as a function of $T$ for each film was extracted…
The dephasing effect of metallic gates on electrons moving in one quasi--one--dimensional diffusive wires is analyzed. The incomplete screening in this geometry implies that the effect of the gate can be described, at high energies or…
We consider clean metals, at finite temperature, in which the inelastic rate, $\hbar/ \tau_{ee}$, can become of the order of, or larger, than the band splitting energy. We show that in suchsystems, contrary to the common knowledge, the…
Resistivity saturation is observed in many metallic systems with a large resistivity, i.e., when the resistivity has reached a critical value, its further increase with temperature is substantially reduced. This typically happens when the…
We treat the question of the low temperature behavior of the dephasing rate of the electrons in the presence of elastic spin disorder scattering and interactions. In the frame of a self-consistent diagrammatic treatment, we obtain…
We investigate decoherence of an electron in graphene caused by electron-flexural phonon interaction. We find out that flexural phonons can produce dephasing rate comparable to the electron-electron one. The problem appears to be quite…
The dephasing time of electrons in open semiconductor quantum dots, measured using ballistic weak localization, is found to saturate below ~ 100 mK, roughly twice the electron base temperature, independent of dot size. Microwave radiation…
The electron temperature is a crucial parameter for the determination of the gas-phase metallicity of galaxies. Low electron temperature is expected for metal-rich galaxies, theoretically. We report the discovery that temperature, as…
We report the observation of strong electron dephasing in a series of disordered Cu$_{93}$Ge$_4$Au$_3$ thin films. A very short electron dephasing time possessing very weak temperature dependence around 6 K, followed by an upturn with…
We point out that even at the absolute zero of temperature environmental decoherence limits the destructive interference between time-reversed paths for an electron in a disordered metal, and thus causes the leading (`weak localization')…
In a weakly disordered metal electron interactions are responsible for both decoherence of the quasi-particles as well as for quantum corrections to thermodynamic properties. We consider electrons which are interacting with…
We report the observation of an anomalous magnetoresistance in extremely dilute quasi-one-dimensional AuFe wires at low temperatures, along with a hysteretic background at low fields. The Kondo resistivity does not show the unitarity limit…
We point out that the low temperature saturation of the electron phase decoherence time in a disordered conductor can be explained within the existing theory of weak localization provided the effect of quantum (high frequency) fluctuations…
HII region electron temperatures are a critical ingredient in metallicity determinations and recent observations reveal systematic variations in the temperatures measured using different ions. We present electron temperatures ($T_e$)…
Many transition metal compounds show saturation of the resistivity at high temperatures, T, while the alkali-doped fullerenes and the high-Tc cuprates are usually considered to show no saturation. We present a model of transition metal…
The analysis of quantum corrections to magnetoconductivity of thin Au films responsible for by the effect of weak electron localization has made it possible to determine the temperature dependences of electron phase relaxation time in the…
We report on the effect of monochromatic microwave (MW) radiation on the weak localization corrections to the conductivity of quasi-one-dimensional (1D) silver wires. Due to the improved electron cooling in the wires, the MW-induced…