Related papers: Weak antilocalization in a strained InGaAs/InP qua…

The spin relaxation rate $1/\tau_s (W)$ in disordered quantum wires with Rashba and Dresselhaus spin-orbit coupling is derived analytically as a function of wire width $W$. It is found to be diminished when $W$ is smaller than the bulk…

The results of experimental study of interference induced magnetoconductivity in narrow quantum well HgTe with the normal energy spectrum are presented. Analysis is performed with taking into account the conductivity anisotropy. It is shown…

The effective linear coupling coefficient and the total spin-splitting are calculated in Ga- and N- face InGaN quantum wells. Alloy content, geometry, and gate voltage affect an internal field and an electron density distribution in the…

We present an atomistic description of the electronic and optical properties of $\text{In}_{0.25}\text{Ga}_{0.75}$N/GaN quantum wells. Our analysis accounts for fluctuations of well width, local alloy composition, strain and built-in field…

Internodal dynamics of quasiparticles in Weyl semimetals manifest themselves in hydrodynamic, transport and thermodynamic phenomena and are essential for potential valleytronic applications of these systems. In an external magnetic field,…

We observed a slow relaxation of magnetoresistance in response to applied magnetic field in selectively doped p-GaAs-AlGaAs structures with partially filled upper Hubbard band. We have paid a special attention to exclude the effects related…

We show that the tunable gate voltage in n-doped AlGaAs/GaAs QW (quantum well) is a key in designing an efficient and ultrafast MRAM (magnetoresistive random access memory). The Rashba spin-orbit coupling in such QWs can be tuned…

The effects of structural (Rashba) and bulk (Dresselhaus) spin-orbit interaction terms on the low-field magnetoresistance are investigated in high-quality two dimensional systems. The weak localization theory accounting for both of these…

Results of detailed investigations of the conductivity and Hall effect in gated single quantum well GaAs/InGaAs/GaAs heterostructures with two-dimensional electron gas are presented. A successive analysis of the data has shown that the…

Type-II Weyl semimetals are characterized by the tilted linear dispersion in the low-energy excitations, mimicking Weyl fermions but with manifest violation of the Lorentz invariance, which has intriguing quantum transport properties. The…

A systematic study of the resistivity and Hall effect in single crystal Nd{2-x}Ce{x}CuO{4-d} films (0.12 < x < 0.20) is presented, with special emphasis on the low-temperature dependence of the normal state conductance. Two-dimensional weak…

The spin-orbit interaction (SOI) of the two-dimensional hole gas in the inversion symmetric semiconductor Ge is studied in a strained-Ge/SiGe quantum well structure. We observed weak anti-localization (WAL) in the magnetoconductivity…

We examine effects of inversion asymmetry of a GaAs/Al0.3Ga0.7As quantum well (QW) on electron-nuclear spin coupling in the fractional quantum Hall (QH) regime. Increasing the QW potential asymmetry at a fixed Landau-level filling factor…

We study nonlocal resistance in an H-shaped two-dimensional HgTe/CdTe quantum well consist of injector and detector, both of which can be tuned in the quantum spin Hall or metallic spin Hall regime. Because of strong spin-orbit interaction,…

Transport signatures of exchange gap opening because of magnetic proximity effect (MPE) are reported for bilayer structures of Bi2Se3 thin films on yttrium iron garnet (YIG) and thulium iron garnet (TmIG) of perpendicular magnetic…

We present transport measurements performed in InAs/GaSb double quantum wells. At the electron-hole crossover tuned by a gate voltage, a strong increase in the longitudinal resistivity is observed with increasing perpendicular magnetic…

We have studied the behavior of the electronic energy spin-splitting of InGaAs-InAlAs based double quantum wells (narrow gap structures) under in-plane magnetic and transverse electric fields. We have developed an improved 8x8 version of…

We have performed magnetoresistance measurements on polyfluorene sandwich devices in weak magnetic fields as a function of applied voltage, device temperature (10K to 300K), film thickness and electrode materials. We observed either…

For over a century, the Hall effect, a transverse effect under out-of-plane magnetic field or magnetization, has been a cornerstone for magnetotransport studies and applications. Modern theoretical formulation based on the Berry curvature…

The temperature effect of quantum interference on resistivity is examined in monolayer graphene, with experimental results showing that the amplitude of the conductance fluctuation increases as temperature decreases. We find that this…