Related papers: Weak antilocalization in a strained InGaAs/InP qua…
A combination of out-of-plane and in-plane magnetoconductance (MC) study in topological insulators (TI) is often used as an experimental technique to probe weak anti-localization (WAL) response of the topological surface states (TSSs).…
The electric conductivity behavior in the single and double tunnel-coupled quantum wells (QW) with different doping profile caused by impact of short pulses of the strong longitudinal (in the quantum wells plane) electric field has been…
Localization of the helical edge states in quantum spin Hall insulators requires breaking time reversal invariance. In experiments this is naturally implemented by applying a weak magnetic field B. We propse a model based on scattering…
We report local and non-local measurements in pin-hole dominated mesoscopic multigraphene spin-valves. Local spin-valve measurements show spurious switching behavior in resistance during magnetic field sweeping similar to the signal…
We non-perturbatively analyze the effect of electron-electron interactions on weak localization (WL) in relatively short metallic conductors with a tunnel barrier. We demonstrate that the main effect of interactions is electron dephasing…
Theory of weak localization in graphene with Rashba splitting of energy spectrum is developed. Anomalous magnetoresistance caused by weak localization is calculated with account for inter- and intravalley, spin-orbit and spin-valley…
We report resistivity measurements in underdoped YBa$_{2}$Cu$_{3}$O$_{6.6} $and overdoped Tl$_{2}$Ba$_{2}$CuO$_{6+x}$ single crystals in which the concentration of defects in the CuO$_{2}$ planes is controlled by electron irradiation. Low…
The weak localization correction to the conductivity in coupled double layer structures is studied both experimentally and theoretically. Statistics of closed paths has been obtained from the analysis of magnetic field and temperature…
Spontaneous intervalley coherence is suspected in several different graphene multilayer systems, but is difficult to confirm because of a paucity of convenient experimental signatures. Here we suggest that magneto-conductance features…
We put forward a theory of the weak localization in two dimensional graphene layers which explains experimentally observable transition between positive and negative magnetoresistance. Calculations are performed for the whole range of…
We develop a semiclassical theory for spin-dependent quantum transport to describe weak (anti)localization in quantum dots with spin-orbit coupling. This allows us to distinguish different types of spin relaxation in systems with chaotic,…
The effect of weak localization on spin relaxation in a two-dimensional system with a spin-split spectrum is considered. It is shown that the spin relaxation slows down due to the interference of electron waves moving along closed paths in…
We present here the electronic structure and optical properties of InGaAs quantum wells with barrier doped with Manganese. We calculated the electronic states and optical emission within the envelope function and effective mass…
We study localized in-gap states and quantum spin Hall effect in Si-doped InAs/GaSb quantum wells. We propose a model describing donor and/or acceptor impurities to describe Si dopants. This model shows in-gap bound states and wide…
We predict two spin-dependent transport phenomena in two-dimensional electron systems, which are induced by spatially fluctuating Rashba spin-orbit interaction. When the electron gas is magnetized, the random Rashba interaction leads to the…
A variational theory is presented of A$^{1-}$ and A$^{2-}$ centers, i.e. of a negative acceptor ion localizing one and two conduction electrons, respectively, in a GaAs/GaAlAs quantum well in the presence of a magnetic field parallel to the…
We propose a non-dissipative transport effect and vortical response in Weyl semimetals in the presence of spatial inhomogeneities, namely a spatially varying tilt of the Weyl cones. We show that when the spectrum is anisotropic and tilted…
We have measured the weak localization magnetoresistance in (001)-oriented Si MOS structures with a wide range of mobilities. For the quantitative analysis of the data, we have extended the theory of weak-localization corrections in the…
We report low-temperature transport measurements in strained InAs/Ga0.68In0.32Sb quantum wells, which supports time-reversal symmetry-protected helical edge states. The temperature and bias voltage dependence of the helical edge conductance…
We investigate the intrinsic spin Hall effect in a quantum well semiconductor doped with magnetic impurities, as a means to manipulate the carriers' spin. Using a simple Hamiltonian with Rashba spin-orbit coupling and exchange interactions,…