Related papers: Spin-filter magnetoresistance in magnetic barrier …
Spin transport in magnetic tunnel junctions in the presence of spin diffusion is considered theoretically. Combining ballistic tunneling across the barrier and diffusive transport in the electrodes, we solve the spin dynamics equation in…
A magnetic tunnel junctions composed of room temperature ferromagnetic semiconductor rutile Ti1-xCoxO2-d and ferromagnetic metal Fe0.1Co0.9 separated by AlOx barrier showed positive tunneling magnetoresistance (TMR) with a ratio of ~11 % at…
Injection of spins into semiconductors is essential for the integration of the spin functionality into conventional electronics. Insulating layers are often inserted between ferromagnetic metals and semiconductors for obtaining an efficient…
We theoretically demonstrate a simple way to significantly enhance the spin/valley polarizations and tunnel- ing magnetoresistnace (TMR) in a ferromagnetic-normal-ferromagnetic (FNF) silicene junction by applying a circularly polarized…
We study non-equilibrium magneto-transport through a single electron transistor or an impurity. We find that due to spin-flip transitions, generated by the spin-orbit interaction, the spectral density of the tunneling current fluctuations…
We calculate the tunneling magnetoresistance (TMR) of Fe$\mid$ZnSe$\mid$Fe$\mid$ZnSe$\mid$Fe (001) double magnetic tunnel junctions as a function of the in-between Fe layer's thickness, and compare these results with those of…
We study spin and charge currents pumped by precessing magnetization of a single ferromagnetic layer within F|I|N or F|I|F (F-ferromagnet; I-insulator; N-normal-metal) multilayers of nanoscale thickness attached to two normal metal…
Perpendicular magnetic tunnel junctions based on MgO/CoFeB structures are of particular interest for magnetic random-access memories because of their excellent thermal stability, scaling potential, and power dissipation. However, the major…
In this work, a theoretical study of spin transport in a pseudovalve spin (PSV) heterostructure is conducted. For the semiconductor (SC), the conduction band at the $\Gamma$ point of reciprocal space and spin-orbit coupling (SOC) are…
The recently discovered magnetism of two-dimensional (2D) van der Waals crystals have attracted a lot of attention. Among these materials is CrI$_3$ - a magnetic semiconductor exhibiting transitions between antiferromagnetic and…
We calculate the tunneling magnetoresistance (TMR) of Fe|ZnSe|Fe|ZnSe|Fe (001) double magnetic tunnel junctions as a function of the in-between Fe layer's thickness, and compare these results with those of Fe|ZnSe|Fe simple junctions. The…
The magnetic state of atomically thin semiconducting layered antiferromagnets such as CrI$_3$ and CrCl$_3$ can be probed by forming tunnel barriers and measuring their resistance as a function of magnetic field ($H$) and temperature ($T$).…
Spin dependent transport has been investigated for an {\it open shell singlet} diiron-oxo cluster. Currents and magnetoresistances have been studied, as a function of spin state, within the non-equilibrium Green's function approach. The…
We demonstrate a simple network-analyzer technique to make quantitative measurements of the bias dependence of spin torque in a magnetic tunnel junction. We apply a microwave current to exert an oscillating spin torque near the…
Antiferromagnetic tunnel junctions (AFMTJs) can exhibit large tunneling magnetoresistance (TMR), making them promising candidates for ultrafast and field-robust spintronic devices. Here, we elucidate the role of band symmetry in governing…
By means of the nonequilibrium Green function technique, the effect of spin-flip scatterings on the spin-dependent electrical transport in ferromagnet-insulator-ferromagnet (FM-I-FM) tunnel junctions is investigated. It is shown that…
A free electron description of spin-dependent tranport in magnetic tunnel junctions with non collinear magnetizations is presented. We investigate the origin of transverse spin density in tunnelling transport and the quantum interferences…
Giant tunnel magnetoresistance (TMR) ratios of 417% at room temperature (RT) and 914% at 3 K were demonstrated in epitaxial Fe/MgO/Fe(001) exchanged-biased spin-valve magnetic tunnel junctions (MTJs) by tuning growth conditions for each…
We study the effect of image potential on spin polarized transport through Fe/MgO/Fe magnetic tunnel junctions in the presence of symmetry filtering. The image potential is included within the Simmon's model coupled with the non-equilibrium…
We present measurements of magnetic tunnel junctions made using a self-assembled-monolayer molecular barrier. Ni/octanethiol/Ni samples were fabricated in a nanopore geometry. The devices exhibit significant changes in resistance as the…