Related papers: The Silicon Inversion Layer With A Ferromagnetic G…
An important consequence of the discovery of giant magnetoresistance in metallic magnetic multilayers is a broad interest in spin dependent effects in electronic transport through magnetic nanostructures. An example of such systems are…
In a spin field effect transistor, a magnetic field is inevitably present in the channel because of the ferromagnetic source and drain contacts. This field causes random unwanted spin precession when carriers interact with non-magnetic…
Monolayer graphene with an energy gap presents a pseudospin symmetry broken ferromagnet with a perpendicular pseudomagnetization whose direction is switched by altering the type of doping between n and p. We demonstrate an electrical…
First principles calculations show that electric fields applied to ferromagnets generate spin currents flowing perpendicularly to the electric field. Reduced symmetry in these ferromagnets enables a wide variety of such spin currents.…
The dynamics of the magnetic order parameters of ferromagnet/normal-metal/ferromagnet spin valves and isolated ferromagnets may be very different. We investigate the role of the nonequilibrium spin-current exchange between the ferromagnets…
The spin Hall effect is a phenomenon that an electric field induces a spin Hall current. In this Letter, we examine the inverse effect that, in a ferromagnetic conductor, a charge Hall current is induced by a spin motive force, or a…
A superconducting double spin valve device is proposed. Its operation takes advantage of the interplay between the spin-filtering effect of ferromagnetic insulators and superconductivity-induced out-of-equilibrium transport. Depending on…
We investigate pure spin pumping in graphene by imposing a ferromagnet (F) with rotating magnetization on top of it. Using the generalized scattering approach for adiabatic spin pumping, we obtain the spin current pumped through magnetic…
New mechanism of magnetoresistance, based on tunneling-emission of spin polarized electrons from ferromagnets (FM) into semiconductors (S) and precession of electron spin in the semiconductor layer under external magnetic field, is…
The material dependence of hot electron magnetotransport in a spin-valve transistor has been theoretically explored. We calculate the parallel and anti-parallel collector current changing the types and relative spin orientation of the…
We propose a superconducting spin-triplet valve, which consists of a superconductor and an itinerant magnetic material, with the magnet showing an intrinsic non-collinear order characterized by a wave vector that may be aligned in a few…
We experimentally compare two types of interface structures with magnetic and non-magnetic Weyl semimetals. They are the junctions between a gold normal layer and magnetic Weyl semimetal Ti$_2$MnAl, and a ferromagnetic nickel layer and…
Room temperature operation of a spin exclusive or (XOR) gate was demonstrated in lateral spin valve devices with nondegenerate silicon (Si) channels. The spin XOR gate is a fundamental part of the magnetic logic gate (MLG) that enables…
Theoretically, we study the dynamics of a current induced domain wall in the bi-layer structure consists of a ferromagnetic layer and a non-magnetic metal layer with strong spin-orbit coupling in the presence of spin-Hall effect. The…
Recent studies have predicted extraordinary properties for transverse domain walls in cylindrical nanowires: zero depinning current, the absence of the Walker breakdown, and applications as domain wall oscillators. In order to reliably…
We present a theoretical model that describes electrical spin-detection at a ferromagnet/semiconductor interface. We show that the sensitivity of the spin detector has strong bias dependence which, in the general case, is dramatically…
We use an aluminium single electron transistor with a magnetic gate to directly quantify the chemical potential anisotropy of GaMnAs materials. Uniaxial and cubic contributions to the chemical potential anisotropy are determined from field…
Efficient injection of spin-polarized electrons into the conduction band of silicon is limited by the formation of a silicide at the ferromagnetic metal (FM)/silicon interface. In the present work, this "magnetically-dead" silicide (where…
A magnetic-field-effect transistor is proposed that generates a spin-polarized current and exhibits a giant negative magnetoresitance. The device consists of a nonmagnetic conducting channel (wire or strip) wrapped, or sandwiched, by a…
A novel magnetoresistance effect, due to the injection of a spin-polarized electron current from a dilute magnetic into a non-magnetic semiconductor, is presented. The effect results from the suppression of a spin channel in the…