Related papers: Spin Splitting in Symmetrical SiGe Quantum Wells
One-body mechanisms of spin splitting of the energy spectrum of 2D electrons in a one-side doped (001) GaAs/Al$_x$Ga$_{1-x}$As quantum well have been studied theoretically and experimentally. The interfacial spin splitting has been shown to…
We have studied the relevance of spin-orbit coupling to the dispersion 00009 relation of the Larmor resonance observed in inelastic light scattering and electron-spin resonance experiments on GaAs quantum wells. We show that the spin-orbit…
The spin-orbit interaction of 2D electrons in the quantum wells grown from the III-V semiconductors consists of the two parts with different symmetry: the Bychkov-Rashba and the Dresselhaus terms. The last term is usually attributed to the…
Using spin and angle-resolved photoemission spectroscopy we investigate a momentum region in Pb quantum well states on Si(111) where hybridization between Rashba-split bands alters the band structure significantly. Starting from the Rashba…
Spin-orbit splitting of conduction band in HgTe quantum wells was studied experimentally. In order to recognize the role of different mechanisms, we carried out detailed measurements of the Shubnikov-de Haas oscillations in gated structures…
We develop a theory of effects of electron-electron collisions on the Dyakonov-Perel' spin relaxation in multi-valley quantum wells. It is shown that the electron-electron scattering rate which governs the spin relaxation is different from…
Experiments on a constant-density two-dimensional hole system in a GaAs quantum well reveal that the metallic behavior observed in the zero-magnetic-field temperature dependence of the resistivity depends on the symmetry of the confinement…
The theory of spin relaxation of conduction electrons is developed for zinc-blende-type quantum wells grown on (110)-oriented substrate. It is shown that, in asymmetric structures, the relaxation of electron spin initially oriented along…
We investigate experimentally and theoretically the spin-orbit effects on the weak localization in a (110) GaAs 2-dimensional electron gas (2DEG). We analyze the role of two different terms in the spin splitting of the conduction band: the…
We study the effect of splitting and zitterbewegung of 1D and 2D electron wave packets in the semiconductor quantum well under the influence of the Rashba spin orbit coupling. Results of our investigations show that the spin orbit…
It has long been assumed that the inversion asymmetry-induced Rashba spin splitting in two-dimensional (2D) systems at zero magnetic field is proportional to the electric field that characterizes the inversion asymmetry of the confining…
Hidden Rashba and Dresselhaus spin-splittings in centrosymmetric crystals with subunits (sectors) having non-centrosymmetric symmetries (the R-2 and D-2 effects) have been predicted and observed experimentally, but the microscopic mechanism…
We consider theoretically the relaxation of electron spin component parallel to the growth direction in multiple (110) GaAs quantum wells. The sources of spin relaxation are the random Rashba spin-orbit coupling due to the electric field of…
We develop the microscopic theory of electron spin dephasing in (110)-grown quantum wells where the electron scattering time is comparable to or exceeds the period of spin precession in the effective magnetic field caused by spin-orbit…
We present the analytical result of the expectation value of spin resulting from an injected spin polarized electron into a semi-infinitely extended 2DEG plane with [001] growth geometry via ideal quantum point contact. Both the Rashba and…
A Rashba type spin-orbit splitting is found for quantum well states formed in ultrathin Pb films on Si(111). The resulting momentum splitting is comparable to what is found for semiconductor heterostructures. The splitting shows no coverage…
Silicon is a leading candidate material for spin-based devices, and two-dimensional electron gases (2DEGs) formed in silicon heterostructures have been proposed for both spin transport and quantum dot quantum computing applications. The key…
We investigate theoretically the spin states in InAs/AlSb/GaSb broken-gap quantum wells by solving the Kane model and the Poisson equation self-consistently. The spin states in InAs/AlSb/GaSb quantum wells are quite different from those…
Fluctuations of electric fields can change the position of a gate-defined quantum dot in a semiconductor heterostructure. In the presence of magnetic field gradient, these stochastic shifts of electron's wavefunction lead to fluctuations of…
Spin-orbit coupling in two-dimensional materials gives rise to a Rashba spin splitting when inversion and mirror symmetries are broken, yet its microscopic origin and quantitative characterization in transition metal dichalcogenides remains…