Related papers: Few-electron quantum dots for quantum computing
We studied the dynamics of a pair of single-electron double quantum dots (DQD) under longitudinal and transverse static magnetic fields and time-dependent harmonic modulation of their interaction couplings. We propose to modulate the tunnel…
We consider the transport spectroscopy of a quantum dot with an even number of electrons at finite bias voltage within the Coulomb blockade diamond. We calculate the tunneling current due to the elastic and inelastic co-tunneling processes…
The Zeeman splitting and the underlying value of the g-factor for conduction band electrons in GaAs/Al_xGa_{1-x}As quantum wells have been measured by spin-beat spectroscopy based on a time-resolved Kerr rotation technique. The experimental…
We report on non-linear magneto-tunneling experiments carried out in single GaAs vertical quantum dots. We show that conduction at low voltage bias can be a spectroscopic tool for both the ground state and first excited states of few…
We present a detailed investigation of different excitonic states weakly confined in single GaAs/AlGaAs quantum dots obtained by the Al droplet-etching method. For our analysis we make use of temperature-, polarization- and magnetic…
A new theoretical method is introduced to study coherent electron transport in an interacting multilevel quantum dot. The method yields the correct behavior both in the limit of weak and strong coupling to the leads, giving a unified…
The electronic properties of semiconductor, vertical, double quantum dot systems with few electrons are investigated by means of analytic, configuration-interaction, and mean-field methods. The combined effect of a high magnetic field,…
The author analyzes quantum computation with the hybrid qubit (HQ) that is encoded using the three-electron configuration of a double quantum dot. All gate operations are controlled with electric signals, while the qubit remains at an…
Scanning-probe magnetometry is a valuable experimental tool to investigate magnetic phenomena at the micro- and nanoscale. We theoretically analyze the possibility of measuring magnetic fields via the electrical current flowing through…
Achieving stable, high-quality quantum dots has proven challenging within device architectures rooted in conventional solid-state device fabrication paradigms. In fact, these are grappled with complex protocols in order to balance ease of…
Cryogenic scanning tunneling microscopy was employed in combination with density-functional theory calculations to explore quantum dots made of In adatoms on the InAs(110) surface. Each adatom adsorbs at a surface site coordinated by one…
Graphene quantum dots (GQDs) can exhibit a range of spectacular phenomena such as the Klein-tunneling-induced quasibound states1-6 and Berry-phase-tuned energy spectra7-15. According to previous studies, all these interesting quantum…
We study the physics of electron tunneling between multiple quantum dots and the edge of a quantum Hall state. Our results generalize earlier work [G. A. Fiete, W. Bishara, C. Nayak, Phys. Rev. Lett. 101, 176801 (2008)] in which it was…
The rate-equation approach is used to describe sequential tunneling through a molecular junction in the Coulomb blockade regime. Such device is composed of molecular quantum dot (with discrete energy levels) coupled with two metallic…
Molecular beam epitaxy is employed to manufacture self-assembled InAs/GaAs quantum dot Schottky resonant tunneling diodes. By virtue of a thin AlAs insertion barrier, the thermal current is effectively reduced and electron resonant…
We present ground-state calculations for laterally coupled quantum dots containing 2, 4, and 8 electrons. As our emphasis is on spin effects our results are obtained by applying spin-density functional theory (SDFT). By varying the distance…
We prepare a gate-defined quadruple quantum dot to study the gate-tunability of single to quadruple quantum dots with finite inter-dot tunnel couplings. The measured charging energies of various double dots suggest that the dot size is…
Quantum dots are small conductive regions in a semiconductor, containing a variable number of electrons (N=1 to 1000) that occupy well defined discrete quantum states. They are often referred to as artificial atoms with the unique property…
We demonstrate that excited states in single-layer graphene quantum dots can be detected via direct transport experiments. Coulomb diamond measurements show distinct features of sequential tunneling through an excited state. Moreover, the…
Quantum dots fabricated using techniques and materials that are compatible with semiconductor manufacturing are promising for quantum information processing. While great progress has been made toward high-fidelity control of quantum dots…