Related papers: Spin extraction from a non-magnetic semiconductor
Antiferromagnetism couples electron spin to its orbital motion, thus allowing excitation of electron-spin transitions by an ac electric rather than magnetic field - with absorption, exceeding that of common electron spin resonance at least…
The occurrence of inhomogeneous spin-density distribution in multilayered ferromagnetic diluted magnetic semiconductor nanostructures leads to strong dependence of the spin-polarized transport properties on these systems. The spin-dependent…
Spin-polarized antiferromagnets (AFMs), including altermagnets, noncollinear AFMs, and two-dimensional layer-polarized AFMs, have emerged as transformative materials for next-generation spintronic and optoelectronic technologies. These…
The features of the spin and charge transport of electrons and holes in a metal and a semiconductor were studied using the Boltzmann transport equations. It was shown that the electrons and holes carry the spin in opposite directions in an…
At low temperatures, electrons in semiconductors are bound to shallow donor impurity ions, neutralizing their charge in equilibrium. Inelastic scattering of other externally-injected conduction electrons accelerated by electric fields can…
Spin polarization of the tunnel conductivity has been studied for Fe/GaAs junctions with Schottky barriers. It is shown that band matching of resonant interface states within the Schottky barrier defines the sign of spin polarization of…
We have investigated the spin current polarization without the external magnetic field in the resonant tunneling diode with the emitter and quantum well layers made from the ferromagnetic GaMnN. For this purpose we have applied the…
The behavior of spin diffusion in doped semiconductors is shown to be qualitatively different than in undoped (intrinsic) ones. Whereas a spin packet in an intrinsic semiconductor must be a multiple-band disturbance, involving inhomogeneous…
Efficient injection of spin-polarized current into a semiconductor is a basic prerequisite for building semiconductor-based spintronic devices. Here, we use inelastic electron tunneling spectroscopy to show that the efficiency of…
Altermagnets exhibit momentum-dependent spin splitting despite having zero net magnetization. This enables a spin-splitter effect in which an external electric field generates transverse spin currents by separating oppositely polarized…
We have studied the effects of Mn concentration on the ballistic spin-polarized transport through diluted magnetic semiconductor heterostructures with a single paramagnetic layer. Using a fitted function for zero-field conduction band…
Antiferromagnetic (AFM) materials have potential advantages for spintronics due to their robustness, ultrafast dynamics, and magnetotransport effects. However, the missing spontaneous polarization and magnetization hinders the efficient…
The phenomenon of mesoscopic Spin-Hall effect reveals in a nonequilibrium spin accumulation (driven by electric current) at the edges of a ballistic conductor or, more generally, in the regions with varying electron density. In this paper…
We develop a semiclassical kinetic theory for electron spin relaxation in semiconductors. Our approach accounts for elastic as well as inelastic scattering and treats Elliott-Yafet and motional-narrowing processes, such as D'yakonov-Perel'…
Electrical injection in organic semiconductors is a key prerequisite for the realization of organic spintronics. Using density-functional theory calculations we report the effect of electron transfer into the organic molecule Alq$_3$. Our…
We study spin polarization in a split-gate quantum wire focussing on the effect of a realistic smooth potential due to remote donors. Electron interaction and spin effects are included within the density functional theory in the local spin…
Altermagnets are a novel class of fully spin-compensated magnetic materials that nevertheless have spin-split electronic bands, offering novel perspectives for spintronics applications. Based on a rigorous analysis of altermagnetic…
We investigate the enhancement of spin polarization in a quantum wire in the presence of a constriction and a spin-orbit coupling segment. It is shown that the spin-filtering effect is significantly heightened in comparison with the…
When charge current passes through a normal metal that exhibits spin Hall effect, spin accumulates at the edge of the sample in the transverse direction. We predict that this spin accumulation, or spin voltage, enables quantum tunneling of…
We have experimentally and theoretically investigated the spin injection/detection polarization in a Si-based ferromagnetic tunnel junction with an amorphous MgO layer, and demonstrated that the experimental features of the spin…