Related papers: Two-dimensional hole precession in an all-semicond…
Hybrid superconductor-semiconductor structures attract increasing attention owing to a variety of potential applications in quantum computing devices. They can serve to the realization of topological superconducting systems, as well as…
We investigate the transmission properties of a spin transistor coupled to two quantum point contacts acting as spin injector and detector. In the Fabry-Perot regime, transport is mediated by quasibound states formed between tunnel…
The spin-Hall conductivity in spatially-homogeneous two-dimensional electron systems described by the spin-orbit Hamiltonian \hbar \Omega_p \sigma is presented as a sum of the universal part Me/8 \pi \hbar determined by the Berry phase…
Spin-orbit (SO) interactions give a spin-dependent correction r_so to the position operator, referred to as the anomalous position operator. We study the contributions of r_so to the spin-Hall effect (SHE) in quasi two-dimensional (2D)…
The conductance modulations in spin field-effect transistors under finite bias voltages were studied. It was shown that when a finite bias voltage is applied between two terminals of a spin field-effect transistor, the spin precession…
A magnetic-field-effect transistor is proposed that generates a spin-polarized current and exhibits a giant negative magnetoresitance. The device consists of a nonmagnetic conducting channel (wire or strip) wrapped, or sandwiched, by a…
The realization of a viable semiconductor transistor and information processing devices based on the electron spin has fueled intense basic research of three key elements: injection, detection, and manipulation of spins in the semiconductor…
Spin transistors (whose on-off operation is achieved by electric-field-controlled spin orientation 1), if realized, can revolutionize modern electronics through the implementation of a faster and a more energy-efficient performance as well…
Nonreciprocal dissipationless transport has long been sought for applications in superconducting technologies. Recently, it has been implemented by the so called superconducting diode effect. Such effect arises from an imbalance in critical…
We present the findings of the spin-dependent transport of the 2D holes in the p-type ultra-narrow self-assembled silicon quantum well (Si-QW) confined by the superconductor barriers on the n-type Si (100) surface. The Aharonov-Casher…
We provide a theoretical description of diffusive charge and spin transport in hybrid devices containing altermagnets. Based on recently derived drift--diffusion equations for coupled charge and spin dynamics and general boundary…
We study a two-dimensional electron system in the presence of spin-orbit interaction. It is shown analytically that the spin-orbit interaction acts as a transversal effective electric field, whose orientation depends on the sign of the…
Quantum dot spin valves are characterized by exchange fields which induce spin precession and generate current spin resonances even in absence of spin splitting. Analogous effects have been studied in double quantum dots, in which the…
We study a ballistic spin field-effect transistor (SFET) with special attention to the issue of multi-channel effects. The conductance modulation of the SFET as a function of the Rashba spin-orbit coupling strength is numerically examined…
The topological quantum field-effect transition in buckled 2D-Xenes can potentially be engineered to enable sub-thermionic transistor operation coupled with dissipationless ON-state conduction. Substantive device design strategies to…
The integration of the spin degree of freedom in charge-based electronic devices has revolutionised both sensing and memory capability in microelectronics. Further development in spintronic devices requires electrical manipulation of spin…
Recent theories predict dissipationless spin current induced by an electric field in doped semiconductors. Nevertheless, the charge current is still dissipative in these systems. In this work, we theoretically predict the dissipationless…
We report a new class of large-gap quantum spin Hall insulators in two-dimensional transition metal dichalcogenides, namely, MX$_2$ with M=(Mo, W) and X=(S, Se, and Te), whose topological electronic properties are highly tunable by external…
The article shows a simple model that computes the magnetoconduction and the integer quantum Hall effect (IQHE) in a two-dimensional electron system (2DES) where the spin is other degree of freedom in the system. The 2DES is confined in a…
Electrically controlled rotation of spins in a semiconducting channel is a prerequisite for the successful realization of many spintronic devices, like, e.g., the spin field effect transistor (sFET). To date, there have been only a few…