Related papers: Field-Effect Transistors on Tetracene Single Cryst…
The primary mechanism of operation of almost all transistors today relies on electric-field effect in a semiconducting channel to tune its conductivity from the conducting 'on'-state to a non-conducting 'off'-state. As transistors continue…
We found that the current-voltage characteristics of the single-layer graphene field-effect transistors exhibit an intriguing feature - an abrupt change of the current near zero gate bias at elevated temperatures T > 500 K. The strength of…
The compound $Nb_{5-\delta}Te_4$ ($\delta=0.23$) with quasi-one-dimensional crystal structure undergoes a transition to superconductivity at $T_c$=0.6--0.9 K. Its electronic transport properties in the normal state are studied in the…
We have investigated the low-frequency 1/f noise of both suspended and on-substrate graphene field-effect transistors and its dependence on gate voltage, in the temperature range between 300K and 30K. We have found that the noise amplitude…
Two-dimensional crystals have emerged as a new class of materials with novel properties that may impact future technologies. Experimentally identifying and characterizing new functional two-dimensional materials in the vast material pool is…
The carrier mobility \mu of few-layer graphene (FLG) field-effect transistors increases ten-fold when the SiO_2 substrate is replaced by single-crystal epitaxial Pb(Zr_0.2Ti_0.8)O_3 (PZT). In the electron-only regime of the FLG, \mu reaches…
Electrical characterization of few-layer MoS2 based field effect transistors with Ti/Au electrodes is performed in the vacuum chamber of a scanning electron microscope in order to study the effects of electron beam irradiation on the…
We present measurements of the transient photoconductivity in pentacene single crystals using optical-pump THz-probe spectroscopy. We have measured the temperature and fluence dependence of the mobility of the photoexcited charge carriers…
The field-effect mobility of graphene devices is discussed. We argue that the graphene ballistic mean free path can only be extracted by taking into account both, the electrical characteristics and the channel length dependent mobility. In…
We demonstrate controllable shift of the threshold voltage and the turn-on voltage in pentacene thin film transistors and rubrene single crystal field effect transistors (FET) by the use of nine organosilanes with different functional…
Understanding charge transport in organic semiconductors in large electric fields is relevant to many applications. We present transport measurements in organic field-effect transistors based on poly(3-hexylthiophene) and…
Temperature-dependent I-V and C-V spectroscopy of single InAs nanowire field-effect transistors were utilized to directly shed light on the intrinsic electron transport properties as a function of nanowire radius. From C-V…
We report measurements of the transport and the magnetic properties of high-quality, sub-millimeter-sized MgB2 single crystals with clear hexagonal-plate shapes. The low-field magnetization and the magnetic hysteresis curves show the vortex…
An n-channel accumulation-type field effect transistor (FET) has been fabricated utilizing a KTaO3 single crystal as an active element and a sputtered amorphous Al2O3 film as a gate insulator. The device demonstrated an ON/OFF ratio of 10^4…
We report a study on the specific heat and heat transport of Tb$_2$Ti$_{2-x}$Zr$_x$O$_7$ ($x =$ 0, 0.02, 0.1, 0.2, and 0.4) single crystals at low temperatures and in high magnetic fields. The magnetic specific heat can be described by the…
The parallel magnetic field tuned two-dimensional superconductor-insulator transition has been investigated in ultrathin films of amorphous Bi. The resistance is found to be independent of temperature on both sides of the transition below…
The performance of field effect transistors based on an single graphene ribbon with a constriction and a single back gate are studied with the help of atomistic models. It is shown how this scheme, unlike that of traditional…
We report the transport properties of mechanically exfoliated few-layer SnSe$_{2}$ flakes, whose mobility is found with four probe measurements to be ~ 85 cm$^{2}$V$^{-1}$s$^{-1}$ at 300 K, higher than those of the majority of few-layer…
The temperature dependence of the ac susceptibility for single-crystalline Fe1.02Se has been measured at high pressures to 6.7 GPa. The superconducting transition temperature Tc displays a large increase from 7 K to 30 K in the two-phase…
The field-effect mobility in an organic thin-film transistor is studied theoretically. From a percolation model of hopping between localized states and a transistor model an analytic expression for the field-effect mobility is obtained. The…