Related papers: Gate-controllable spin-battery
Exploring novel strategies to manipulate the order parameter of magnetic materials by electrical means is of great importance, not only for advancing our understanding of fundamental magnetism, but also for unlocking potential practical…
The spin-orbit torque device is promising as a candidate for next generation magnetic memory, while the static in-plane field needed to induce deterministic switching is a main obstacle for its application in highly integrated circuits.…
Spin-orbit torque provides an efficient pathway to manipulate the magnetic state and magnetization dynamics of magnetic materials, which is crucial for energy-efficient operation of a variety of spintronic devices such as magnetic memory,…
We propose a two-terminal spin-orbit interferometer with a hot molecule inserted in one of its arms to generate pure spin currents. Local heating is achieved by coupling the vibrational modes of the molecule to a third (phononic) reservoir.…
We propose an implementation of the two-qubit gate in a quantum dot spin qubit system which is immune to charge noise problems. Our proposed implementation, if it could be realized in a physical system, would have the advantage of being…
We propose a device based on an antidot embedded in a narrow quantum wire in the edge state regime, that can be used to inject and/or to control spin polarized current. The operational principle of the device is based on the effect of…
A quantum dot formed in a suspended carbon nanotube exposed to an external magnetic field is predicted to act as a thermoelectric unipolar spin battery which generates pure spin current. The built-in spin flip mechanism is a consequence of…
A scheme of spin diode is proposed that uses a step-like quantum wire with Rashba spin-orbit interaction, connected to two leads with different width. It is shown that a very large vertical spin-polarized current can be generated when…
It was proposed that a double quantum dot can be used to be a detector of spin bias. Electron transport through a double quantum dot is investigated theoretically when a pure spin bias is applied on two conducting leads contacted to the…
Recent achievements in the field of gate defined semiconductor quantum dots reinforce the concept of a spin-based quantum computer consisting of nodes of locally connected qubits which communicate with each other via superconducting circuit…
Qubits based on transistor-like Si MOS nanodevices are promising for quantum computing. In this work, we demonstrate a double quantum dot spin qubit that is all-electrically controlled without the need for any external components, like…
We theoretically predict that a pure steady state spin-current without charge-current can induce an electric field. A formula for the induced electric field is derived and we investigate its characteristics. Conversely, a moving spin is…
We propose a fast optically induced two-qubit \textsc{c-phase} gate between two resident spins in a pair of coupled quantum dots. An excited bound state which extends over the two dots provides an effective electron-electron exchange…
We study the DC spin current induced into an unbiased quantum spin Hall system through a two-point contacts setup with time dependent electron tunneling amplitudes. By means of two external gates, it is possible to drive a current with…
We propose a spin-mechanical device to control and detect spin currents by mechanical torque. Our hybrid nano-electro-mechanical device, which contains a nanowire with a ferromagnetic-nonmagnetic interface, is designed to measure or induce…
The recently developed semiclassical theory for magnetoelectronic circuits is applied to a transistor-like device consisting of a normal metal island and three magnetic terminals. The electric current between source and drain can be…
Assisted with linear optical manipulation, single photon, entangled photon pairs, photon measurement, and classical communication, a scheme for two-spin qubits phase gate and teleportation of a CNOT gate between two electron spins from…
We theoretically investigate electron spin operations driven by applied electric fields in a semiconductor double quantum dot (DQD). Our model describes a DQD formed in semiconductor nanowire with longitudinal potential modulated by local…
We use an aluminium single electron transistor with a magnetic gate to directly quantify the chemical potential anisotropy of GaMnAs materials. Uniaxial and cubic contributions to the chemical potential anisotropy are determined from field…
We study spin-dependent transport through a quantum nanostructure composed of a quantum dot (QD) surrounded by a quantum nanoring. The nanostructure is side-attached to source and drain electrodes and we assume that the confining potential…