Related papers: Nitrides as spintronic materials
The key obstacle toward realizing integrated gallium nitride (GaN) electronics is its low hole mobility. Here, we explore the possibility of improving the hole mobility of GaN via epitaxial matching to II-IV nitride materials that have…
Recent experiments on mixed liquid crystals have highlighted the hugely significant role of ferromagnetic nanoparticle impurities in defining the nematic-smectic-A phase transition point. Structured around a Flory-Huggins free energy of…
Impurity effects on the triangular antiferromagnets Ni$_{1-x}M_x$Ga$_2$S$_4$ ($M=$ Mn, Fe, Co and Zn) are studied. The 2D frozen spin-disordered state of NiGa$_2$S$_4$ is stable against the substitution of Zn$^{2+}$ ($S=0$) and Heisenberg…
The growing library of two-dimensional layered materials is providing researchers with a wealth of opportunity to explore and tune physical phenomena at the nanoscale. Here, we review the experimental and theoretical state-of-art concerning…
Topological spin textures in frustrated intermetallics hold great promise for spintronics applications. However, understanding their origin and properties remains a significant challenge due to competing and often long-range interactions…
The rare earth neodymium arguably exhibits the most complex magnetic ordering and series of magnetic phase transitions of the elements. Here we report the results of small-angle neutron scattering (SANS) measurements as a function of…
The sign, magnitude, and range of the exchange couplings between pairs of Mn ions is determined for (Ga,Mn)N and (Ga,Mn)N:Si with x < 3%. The samples have been grown by metalorganic vapor phase epitaxy and characterized by secondary-ion…
To explore how anion substitution modifies the existing magnetism in strongly correlated oxides, we investigate local electronic states and magnetic ordering in nickel oxide (NiO) induced by substituting oxygen (O) with nitrogen (N). Each N…
Impurity effect is systematically studied in doped Haldane material Pb(Ni$_{1-x}$$M_x$)$_2$V$_2$O$_8$ ($M$ = Mn, Co, Cu, and Mg) by use of DC and AC susceptibility, and heat capacity measurements. The occurrence of three-dimensional ordered…
The problem of a magnetic impurity, atomic or molecular, absorbed on top of a carbon atom in otherwise clean graphene is studied using the numerical renormalization group. The spectral, thermodynamic, and scattering properties of the…
A detailed study of the magnetic and magnetocaloric properties of a garnet compound Mn$_{3}$Cr$_{2}$Ge$_{3}$O$_{12}$ is carried out using x-ray diffraction, magnetization, heat capacity, and neutron diffraction measurements as well as…
Macroscopic polarization, both of intrinsic and piezoelectric nature, is unusually strong in III-V nitrides, and the built in electric fields in the layers of nitride-based nanostructures, stemming from polarization changes at…
Relaxations at nonpolar surfaces of III-V compounds result from a competition between dehybridization and charge transfer. First principles calculations for the (110) and (10$\bar{1}$0) faces of zincblende and wurtzite AlN, GaN and InN…
Complex chalcogenides in the $M$PS$_3$ family of materials ($M$ = Mn, Fe, Co, and Ni) display remarkably different phase progressions depending upon the metal center orbital filling, character of the P-P linkage, and size of the van der…
After the first unequivocal demonstration of spin transport in graphene (Tombros et al., 2007), surprisingly at room temperature, it was quickly realized that this novel material was relevant for both fundamental spintronics and future…
NiGa$_2$S$_4$ is a triangular lattice S=1 system with strong two-dimensionality of the lattice, actively discussed as a candidate to host spin-nematic order brought about by strong quadrupole coupling. Using Raman scattering spectroscopy we…
Scaling wide-band-gap semiconductors to the ultrathin limit offers a transformative pathway for power electronics, with gallium nitride (GaN) representing a cornerstone material in this class. However, the operational resilience and…
The rapidly expanding research in Spintronics, the electronics utilizing the electron spin instead of its charge, is driven by the very interesting potential applications. The actual task is to develop principles for the spin manipulations…
Tunable magnetic interactions in high-mobility nonmagnetic semiconductor heterostructures are centrally important to spin-based quantum technologies. Conventionally, this requires incorporation of "magnetic impurities" within the…
We have used spherical neutron polarimetry to investigate the magnetic structure of the Mn spins in the hexagonal semimetal Mn$_3$Ge, which exhibits a large intrinsic anomalous Hall effect. Our analysis of the polarimetric data finds a…