Polarization fields in nitride nanostructures: ten points to think about
Materials Science
2009-10-31 v1
Abstract
Macroscopic polarization, both of intrinsic and piezoelectric nature, is unusually strong in III-V nitrides, and the built in electric fields in the layers of nitride-based nanostructures, stemming from polarization changes at heterointerfaces, have a major impact on the properties of single and multiple quantum wells, high mobility transistors, and thin films. The concepts involved in the theory and applications of polarization in nitrides have encountered some resistance in the field. Here we discuss critically ten ``propositions'' aimed at clarifying the main controversial issues.
Cite
@article{arxiv.cond-mat/9908060,
title = {Polarization fields in nitride nanostructures: ten points to think about},
author = {Fabio Bernardini and Vincenzo Fiorentini},
journal= {arXiv preprint arXiv:cond-mat/9908060},
year = {2009}
}
Comments
RevTeX 5 pages, 2 embedded figures