Related papers: Spin transport in nanowires
We study spin polarized transport in silicon germanium nanowires using a semiclassical monte carlo approach. Spin depolarization in the channel is caused due to D'yakonov-Perel (DP) relaxation associated with Rashba spin orbit coupling and…
We simulate spin polarized transport of electrons along a silicon nanowire and along a silicon two dimensional channel. Spin density matrix calculations are used along with the semi-classical Monte Carlo approach to model spin evolution…
We use semiclassical Monte Carlo approach along with spin density matrix calculations to model spin polarized electron transport. The model is applied to germanium nanowires and germanium two dimensional channels to study and compare spin…
We investigate spin polarized electron transport in ultra-thin Si-Core/Ge-Shell and Ge-Core/Si-Shell nanowire system using semi-classical Monte Carlo simulation method. Depolarization of electron's spin occurs in nanowire mainly due to…
We use semiclassical Monte Carlo approach to investigate spin polarized transport in InP and InSb nanowires. Spin dephasing in III-V channels is caused due to D'yakonov- Perel (DP) relaxation and due to Elliott-Yafet (EY) relaxation. The DP…
We simulated spin polarized transport of electrons along III-V nanowires and two dimensional III-V channels using semi classical Monte Carlo method. Properties of spin relaxation length have been investigated in different III-V zinc-blende…
The influence of temperature and transport conditions on the electron spin relaxation in lightly doped n-type GaAs semiconductors is investigated. A Monte Carlo approach is used to simulate electron transport, including the evolution of…
We present a numerical study of dephasing of electron spin ensembles in a diffusive quasi-one-dimensional GaAs wire due to the D'yakonov-Perel' spin-dephasing mechanism. For widths of the wire below the spin precession length and for equal…
We study the spatial decay of spin polarized hot carrier current in a spin-valve structure consisting of a semiconductor quantum wire flanked by half-metallic ferromagnetic contacts. The current decays because of D'yakonov-Perel' spin…
Spin transport property of polarization induced two-dimensional electron gas channel formed in the central vertical plane of a wedge-shaped \textit{c}-oriented GaN nanowall is investigated theoretically. Since the confining potential…
A spin transport model is employed to study the effects of spin dephasing induced by diffusion-driven transit-time uncertainty through semiconductor spintronic devices where drift is the dominant transport mechanism. It is found that in the…
We have experimentally and theoretically investigated the electron spin transport and spin distribution at room temperature in a Si two-dimensional (2D) inversion channel of back-gate-type spin metal-oxide-semiconductor field-effect…
We have investigated charge and spin transport in n-type metallic GaAs nanowires (~ 10^17 cm^-3 doping level), grown by hydride vapor phase epitaxy (HVPE) on Si substrates. This was done by exciting the nanowire by tightly-focussed…
We report experimental study of spin transport in all-metal nanowire spin valve structures. The nanowires have a diameter of 50 nm and consist of three layers - cobalt, copper and nickel. Based on the experimental observations, we conclude…
We study the optically induced spin polarization, spin dephasing and diffusion in several high-mobility two-dimensional electron systems, which are embedded in GaAs quantum wells grown on (110)-oriented substrates. The experimental…
We have used a polarized microluminescence technique to investigate photocarrier charge and spin transport in n-type depleted GaAs nanowires ($ \approx 10^{17}$ cm$^{-3}$ doping level). At 6K, a long-distance tail appears in the…
We study the effect of the impurity density on lifetimes and relaxation lengths of electron spins in the presence of a static electric field in a n-type GaAs bulk. The transport of electrons and the spin dynamics are simulated by using a…
A longstanding goal of spintronics is to inject, coherently transport, and detect spins in a semiconductor nanowire where a SINGLE quantized subband is occupied at room temperature. Here, we report achieving this goal in 50-nm diameter InSb…
We present a general unifying theory for spin polarization decay due to the interplay of spin precession and momentum scattering that is applicable to both spin-1/2 electrons and spin-3/2 holes. Our theory allows us to identify and…
We have studied the spin dynamics of a high-mobility two-dimensional electron system in a GaAs/Al_{0.3}Ga_{0.7}As single quantum well by time-resolved Faraday rotation and time-resolved Kerr rotation in dependence on the initial degree of…