Related papers: Manipulation of spin dephasing in InAs quantum wir…
We propose a lateral spin-blockade device that uses an InGaAs/InAlAs double quantum well (DQW), where the values of the Rashba spin-orbit parameter $\alpha_{\rm R}$ are opposite in sign but equal in magnitude between the constituent quantum…
Spin transport was studied in a two-dimensional electron gas hosted in a wide GaAs quantum well occupying two subbands. Using space and time Kerr rotation microscopy to image drifting spin packets under an in-plane accelerating electric…
The control of intrinsic magnetic degrees of freedom is very important as it offers a practical means to manipulate and probe electron spin transport. Tunable spin-orbit effect in quantum wires can in principle serve as a means to achieve…
Electrical current manipulation of magnetization switching through spin-orbital coupling in ferromagnetic semiconductor (Ga,Mn)As Hall bar devices has been investigated. The efficiency of the current-controlled magnetization switching is…
We show here theoretically and experimentally that a Rashba-split electron state inside a ferromagnet can efficiently convert a dynamical spin accumulation into an electrical voltage. The effect is understood to stem from the Rashba…
In this work, we study a possibility to measure the transverse and longitudinal relaxation times of a collection of polarized nuclear spins located in the region of a quantum wire via its conductance. The interplay of an external in-plane…
Spin-orbit coupling is a source of strong spin dephasing in two- and three-dimensional semiconducting systems. We report that spin dephasing in a two-dimensional electron gas can be suppressed by introducing a quantum point contact.…
The spin relaxation rate $1/\tau_s (W)$ in disordered quantum wires with Rashba and Dresselhaus spin-orbit coupling is derived analytically as a function of wire width $W$. It is found to be diminished when $W$ is smaller than the bulk…
We propose a semiconductor structure that can rotate the electron spin without using ferromagnetic contacts, tunneling barriers, external radiation etc. The structure consists of a strongly curved one-dimensional ballistic wire with…
We study the depolarization of optically oriented electrons in quantum wells subjected to an in-plane magnetic field and show that the Hanle curve drastically depends on the carrier mobility. In low-mobility structures, the Hanle curve is…
Spin-orbit interaction is investigated in a dual gated InAs/GaSb quantum well. Using an electric field the quantum well can be tuned between a single carrier regime with exclusively electrons as carriers and a two-carriers regime where…
A class of antiferromagnets with spin-polarized electron bands, yet zero net magnetization, called altermagnets is attracting increasing attention due to their potential use in spintronics. Here, we study spin injection into an altermagnet…
Using time-resolved Faraday rotation, the drift-induced spin-orbit Field of a two-dimensional electron gas in an InGaAs quantum well is measured. Including measurements of the electron mobility, the Dresselhaus and Rashba coefficients are…
In 2D systems with a spin-orbit interaction, magnetic focussing can be used to create a spatial separation of particles with different spin. Here we measure hole magnetic focussing for two different magnitudes of the Rashba spin-orbit…
We study the effect of anisotropy of the Rashba coupling on the extrinsic spin Hall effect due to spin-orbit active adatoms on graphene. In addition to the intrinsic spin-orbit coupling, a generalized anisotropic Rashba coupling arising…
We show theoretically that conversion between spin and charge by spin-orbit interaction in metals occurs even in a non-local setup where magnetization and spin-orbit interaction are spatially separated if electron diffusion is taken into…
Spin drag measurements were performed in a two-dimensional electron system set close to the crossed spin helix regime and coupled by strong intersubband scattering. In a sample with uncommon combination of long spin lifetime and high charge…
In lateral quantum dots, the combined effect of both Dresselhaus and Bychkov-Rashba spin orbit coupling is equivalent to an effective magnetic field B_so which has the opposite sign for s_z=1/2 spin electrons. When the external magnetic…
An ensemble Monte Carlo method is used to study the spin injection through a ferromagnet-semiconductor junction where a Schottky barrier is formed. It is shown that the Schottky-barrier-induced electric field which is confined in the…
We investigate the electric manipulation of a single electron spin in a single gate-defined quantum dot. We observe that so-far neglected differences between the hyperfine and spin-orbit mediated electric dipole spin resonance conditions…