Related papers: Split-off dimer defects on the Si(001)2x1 surface
The negatively-charged silicon-vacancy (SiV$^-$) center in diamond is a promising single photon source for quantum communications and information processing. However, the center's implementation in such quantum technologies is hindered by…
In this work the effects of defects in the superconducting phases of the twisted bilayer graphene (TBG) are investigated. A will-accepted low energy effective model and a non-magnetic impurity potential to mimic defects are employed.…
Dangling bonds (DBs) are common defects in silicon that affect its electronic performance by trapping carriers at the in-gap levels. For probing the electrical properties of individual DBs, a scanning tunneling microscope (STM) is an…
BiVO3F is a promising material used in solar energy conversion systems. Here, we first report the calculated structural, electronic, and surface reaction properties using PBE and hybrid density functionals. We found it is a direct band gap…
Type-II Dirac points (DPs), which occur at the intersection of strongly tilted and touching energy bands, exhibit many intriguing physical phenomena fundamentally different from the non-tilted type-I counterparts. Over the past decade,…
High resolution laser-based angle-resolved photoemission measurements were carried out on an overdoped $Bi_2Sr_2CaCu_2O_{8+\delta}$ superconductor with a Tc of 75 K. Two Fermi surface sheets caused by bilayer splitting are clearly…
In-situ, two-dimensional (2D) Langmuir probe measurements across a large part of the TCV divertor are reported in L-mode discharges with and without divertor baffles. This provides detailed insights into time averaged profiles, particle…
We investigate the optical properties of polycrystalline diamond membranes containing silicon-vacancy (SiV) color centers in combination with other nano-analytical techniques. We analyze the correlation between the Raman signal, the SiV…
Deterioration of the operation parameters of Al/SiO2/p-type Si surface barrier detector upon irradiation with alpha-particles at room temperature was investigated. As a result of 40-days irradiation with a total fluence of 8*10^9…
The 'double Dirac cone' 2D topological interface states found on the (001) faces of topological crystalline insulators such as Pb$_{1-x}$Sn$_{x}$Se feature degeneracies located away from time reversal invariant momenta, and are a…
We have used tight-binding molecular-dynamics simulations to investigate the role of point defects (vacancies and interstitials) on structural relaxation in amorphous silicon. Our calculations give unambiguous evidence that point defects…
The results of a 1-D Monte-Carlo program, which simulates the avalanche multiplication in diodes with depths of the order of 1 $\mu$m based on the method proposed in Ref.1, are presented. The aim of the study is to achieve a deeper…
Exposure of matter to high energy, heavy ions induces defects along the trajectories of the ions through electronic and nuclear energy loss processes. Defects, including color centers, can recombine or form along latent damage tracks in…
Control over the charge states of color centers in solids is necessary in order to fully utilize them in quantum technologies. However, the microscopic charge dynamics of deep defects in wide-bandgap semiconductors are complex, and much…
Several models of oxygenated and hydrogenated surfaces of Si quantum wells and Si nanocrystals of variable shapes have been constructed in order to assess curvature effects on energy gaps due to the three Si-suboxides. Si-suboxides in…
Chalcogen vacancies in transition metal dichalcogenides are widely acknowledged as both donor dopants and as a source of disorder. The electronic structure of sulphur vacancies in MoS2 however is still controversial, with discrepancies in…
Bare Si(100)-2$\times$1 surface atoms exhibit a buckled structure where one Si atom in a dimer is lowered while the other is raised, leading to two possible buckling configurations equivalent in energy. The relatively low energy barrier…
The spin splitting driven by spin-orbit coupling in monolayer (ML) transition metal dichalcogenides (TMDCs) family has been widely studied only for the 1H-phase structure, while it is not profound for the 1T-phase structure due to the…
Dark matter (DM) direct detections are investigated for models with the following properties: isospin-violating couplings, exothermic scatterings, and/or a light mediator, with the aim to reduce the tension between the CDMS-Si positive…
We investigate the electronic structure of high-density layers of Sb dopants in a silicon host, so-called Si:Sb $\delta$-layers. We show that, in spite of the known challenges in producing highly confined Sb $\delta$-layers, sufficient…