Related papers: Electron Spin Relaxation under Drift in GaAs
We utilize the kinetic spin Bloch equation approach to investigate the steady-state spin diffusion in $n$-type (111) GaAs quantum wells, where the in-plane components of the Dresselhaus spin-orbit coupling term and the Rashba term can be…
Recent experiments demonstrate that a ballistic version of spin resonance, mediated by spin-orbit interaction, can be induced in narrow channels of a high-mobility GaAs two-dimensional electron gas by matching the spin precession frequency…
We present a detailed experimental and theoretical analysis of the spin dynamics of two-dimensional electron gases (2DEGs) in a series of n-doped GaAs/AlGaAs quantum wells. Picosecond-resolution polarized pump-probe reflection techniques…
The mechanisms that determine spin relaxation times of localized electrons in impurity bands of n-type semiconductors are considered theoretically and compared with available experimental data. The relaxation time of the non-equilibrium…
We develop a drift-diffusion equation that describes electron spin polarization density in two-dimensional electron systems. In our approach, superpositions of spin-up and spin-down states are taken into account, what distinguishes our…
Room temperature electronic diffusion is studied in 3 mum thick epitaxial p+ GaAs lift-off films using a novel circularly polarized photoluminescence microscope. The method is equivalent to using a standard optical microscope and provides a…
We find an exact solution for the problem of electron spin relaxation in a 2D circle with Rashba spin-orbit interaction. Our analysis shows that the spin relaxation in finite-size regions involves three stages and is described by multiple…
We discuss the implications of a small indium content (3%) in a GaAs epilayer on the electron- and nuclear-spin relaxation due to enhanced quadrupolar effects induced by the strain. Using the weakly perturbative spin-noise spectroscopy, we…
Based on spin-charge coupled drift-diffusion equations, which are derived from kinetic equations for the spin-density matrix in a rigorous manner, the electric-field-induced nonequilibrium spin polarization is treated for a two-dimensional…
Electron spin dynamics in InAs/GaAs heterostructures consisting of a single layer of InAs (1/3$\sim$1 monolayer) embeded in (001) and (311)A GaAs matrix was studied by means of time-resolved Kerr rotation spectroscopy. The spin relaxation…
Electron transport in the transistor structure based on thin undoped GaAs-in-Al2O3 quantum wire is simulated by ensemble Monte-Carlo method taking into account electron scattering by the phonons and surface roughness. The influence of…
The effect of spin-disorder scattering on perpendicular transport in a magnetic monolayer is considered within the single-site Coherent Potential Approximation (CPA). The exchange interaction between a conduction electron and localized…
We argue that in the ensemble Monte Carlo approach, the spin decoherence caused by electron-electron interactions in n-type bulk GaAs at room temperature, according to Dyakonov-Perel theory, is mainly induced by the electron density while…
We analyze the electron spin relaxation rate $1/T_1$ of individual ion-implanted $^{31}$P donors, in a large set of metal-oxide-semiconductor (MOS) silicon nanoscale devices, with the aim of identifying spin relaxation mechanisms peculiar…
The temperature-dependent electron spin relaxation of positively charged excitons in a single InAs quantum dot (QD) was measured by time-resolved photoluminescence spectroscopy at zero applied magnetic fields. The experimental results show…
Controlling the flow of electrons by manipulation of their spin is a key to the development of spin-based electronics. While recent demonstrations of electrical-gate control in spin-transistor configurations show great promise, operation at…
We develop a theory of spin-dependent phenomena in the streaming regime characterized by ballistic acceleration of electrons in the moderate electric field until they achieve the optical phonon energy and abruptly emit the phonons. It is…
Highly accurate numerical results of phonon-induced two-electron spin relaxation in silicon double quantum dots are presented. The relaxation, enabled by spin-orbit coupling and the nuclei of $^{29}$Si (natural or purified abundance), are…
In this letter, the first spin noise spectroscopy measurements in semiconductor systems of reduced effective dimensionality are reported. The non-demolition measurement technique gives access to the otherwise concealed intrinsic, low…
Electron spin relaxation in a spin-polarized quantum Hall state is studied. Long spin relaxation times that are at least an order of magnitude longer than those measured in previous experiments were observed and explained within the…