Related papers: Electron Spin Relaxation under Drift in GaAs
We consider theoretically the relaxation of electron spin component parallel to the growth direction in multiple (110) GaAs quantum wells. The sources of spin relaxation are the random Rashba spin-orbit coupling due to the electric field of…
This work aims to study theoretically the electron-proton scattering for initially spin-polarized electrons in the presence of a circularly polarized electromagnetic field. Using the first Born approximation and the Dirac-Volkov states for…
By means of time-resolved optical orientation under strong optical pumping, the k-dependence of the electron spin-flip time (t_sf) in undoped GaAs is experimentally determined. t_sf monotonically decreases by more than one order of…
Long-range quantum communication for spin qubits is an important open problem. Here we study decoherence of an electron spin qubit that is being transported in a moving quantum dot. We focus on spin decoherence due to spin-orbit interaction…
Monte Carlo simulations are performed to study the in-plane transport of spin-polarized electrons in III-V semiconductor quantum wells. The density matrix description of the spin polarization is incorporated in the simulation algorithm. The…
We investigate the influence of an external magnetic field on spin phase relaxation of single electrons in semiconductor quantum dots induced by the hyperfine interaction. The basic decay mechanism is attributed to the dispersion of local…
We show that the propagation of spin polarized carriers may be dramatically affected by {\em inhomogeneous} electric fields. Surprisingly, the spin diffusion length is found to strongly depend on the sign and magnitude of electric field…
We report electronic control and measurement of an imbalance between spin-up and spin-down electrons in micron-scale open quantum dots. Spin injection and detection was achieved with quantum point contacts tuned to have spin-selective…
Spin relaxation was studied in a two-dimensional electron gas confined in a wide GaAs quantum well. Recently, the control of the spin relaxation anisotropy by diffusive motion was first shown in D. Iizasa et al., arXiv:2006.08253 (2020).…
We have studied the effect of nonequilibrium longitudinal optical phonons on hot-electron spin relaxation in $n$-type GaAs quantum wells. The longitudinal optical phonons, due to the finite relaxation rate, are driven to nonequilibrium…
We develop an extended pump-probe Faraday rotation technique to study the submicrosecond electron spin dynamics with picosecond time resolution in a wide range of magnetic fields. The electron spin dephasing time $T_2^*$ and the…
Modern electronic devices utilize charge to transmit and store information. This leaves the information susceptible to external influences, such as radiation, that can introduce short timescale charge fluctuations and, long term, degrade…
We demonstrate theoretically that spin dynamics of electrons injected into a GaAs semiconductor structure through a Schottky barrier possesses strong non-equilibrium features. Electrons injected are redistributed quickly among several…
We develop a semiclassical kinetic theory for electron spin relaxation in semiconductors. Our approach accounts for elastic as well as inelastic scattering and treats Elliott-Yafet and motional-narrowing processes, such as D'yakonov-Perel'…
We study electron spin relaxation in one-dimensional structures of finite length in the presence of Bychkov-Rashba spin-orbit coupling and boundary spin relaxation. Using a spin kinetic equation approach, we formulate boundary conditions…
The electron spin relaxation in $n$-type and intrinsic GaAs$_{1-x}$Bi$_x$ with Bi composition $0\le x \le 0.1$ is investigated from the microscopic kinetic spin Bloch equation approach. The incorporation of Bi is shown to markedly decrease…
We investigate the electron spin dephasing in the presence of spin phase recovering by a serried $\pi$-pulse sequence in $n$-type (001) GaAs quantum wells in a wide range of temperature and density regimes. Our numerical calculation is…
We use all-electrical methods to inject, transport, and detect spin-polarized electrons vertically through a 350-micron-thick undoped single-crystal silicon wafer. Spin precession measurements in a perpendicular magnetic field at different…
At each of the boundaries of the two-dimensional (2D) rectangular conductor parallel to the electric current there arises a stripe with an electric field transverse to the current and a 100% electron spin polarization. The two stripes have…
We construct a spin-drift-diffusion model to describe spin-polarized electron transport in zincblende semiconductors in the presence of magnetic fields, electric fields, and off-diagonal strain. We present predictions of the model for…