Related papers: Numerical Modelling of Transport Processes in Semi…
A simplified transient energy-transport system for semiconductors subject to mixed Dirichlet-Neumann boundary conditions is analyzed. The model is formally derived from the non-isothermal hydrodynamic equations in a particular vanishing…
The peculiarities of electric current are studied occurring in semiconductors with strongly nonuniform distribution of charge carriers. The formation of such nonuniformities and the regulation of carrier mobilities can be realized by means…
Nonequilibrium processes in semiconductors are considered with highly nonuniform initial densities of charge carriers. It is shown that there exist such distributions of charge densities under which the electric current through a sample…
We consider a stationary drift-diffusion system with ionic charge carriers and external generation of electron and hole charge carriers. This system arises, among other applications, in the context of semiconductor modeling for perovskite…
We continue to develop a new approach to description of charge kinetics in disordered semiconductors. It is based on fractional diffusion equations. This article is devoted to transient processes in structures under dispersive transport…
An implicit Euler finite-volume scheme for a spinorial matrix drift-diffusion model for semiconductors is analyzed. The model consists of strongly coupled parabolic equations for the electron density matrix or, alternatively, of weakly…
A system of degenerate drift-diffusion equations for the electron, hole, and oxygen vacancy densities, coupled to the Poisson equation for the electric potential, is analyzed in a three-dimensional bounded domain with mixed…
A system of drift-diffusion equations for the electron, hole, and oxygene vacancy densities in a semiconductor, coupled to the Poisson equation for the electric potential, is analyzed in a bounded domain with mixed Dirichlet-Neumann…
A class of energy-transport equations without electric field under mixed Dirichlet-Neumann boundary conditions is analyzed. The system of degenerate and strongly coupled parabolic equations for the particle density and temperature arises in…
A unified theoretical description of ballistic and diffusive carrier transport in parallel-plane semiconductor structures is developed within the semiclassical model. The approach is based on the introduction of a thermo-ballistic current…
We study the quasi-neutral limit in an optimal semiconductor design problem constrained by a nonlinear, nonlocal Poisson equation modelling the drift diffusion equations in thermal equilibrium. While a broad knowledge on the asymptotic…
We prove existence and uniqueness of solutions of a large class of initial-boundary-value problems characterized by a quasi-linear third order equation (the third order term being dissipative) on a finite space interval with Dirichlet,…
Transient simulations of a resonant tunneling diode oscillator are presented. The semiconductor model for the diode consists of a set of time-dependent Schr\"odinger equations coupled to the Poisson equation for the electric potential. The…
We present the first numerical solutions of a kinetic theory description of self-sustained current oscillations in n-doped semiconductor superlattices. The governing equation is a single-miniband Boltzmann-Poisson transport equation with a…
We analyze the transport properties of a semiconductor based bilayer system under non-equilibrium conditions with special emphasis on the charge transfer statistics in the regime dominated by the exciton transport. We consider two different…
The aim of this paper is to discuss the appropriate modelling of in- and outflow boundary conditions for nonlinear drift-diffusion models for the transport of particles including size exclusion and their effect on the behaviour of…
The global-in-time existence and uniqueness of bounded weak solutions to a spinorial matrix drift-diffusion model for semiconductors is proved. Developing the electron density matrix in the Pauli basis, the coefficients (charge density and…
Design of modern nanostructured semiconductor devices often calls for simulation tools capable of modeling arbitrarily-shaped multiscale geometries. In this work, to this end, a discontinuous Galerkin (DG) method-based framework is…
The existence of global weak solutions to a partial-differential-algebraic system is proved. The system consists of the drift-diffusion equations for the electron, hole, and oxide vacancy densities in a memristor device, the Poisson…
Motivated by experiments on chains of superconducting qubits, we consider the dynamics of a classical Klein-Gordon chain coupled to coherent driving and subject to dissipation solely at its boundaries. As the strength of the boundary…