Related papers: Step bunching during Si(001) homoepitaxy caused by…
Real-time analysis of the growth modes during homoepitaxial (0001)GaN growth by plasma-assisted molecular beam epitaxy was performed using reflection high energy electron diffraction. A growth mode map was established as a function of Ga/N…
In this paper we present a generalization of a simple solid-on-solid epitaxial model of thin films growth, when surface morphology anisotropy is provoked by anisotropy in model control parameters: binding energy and/or diffusion barrier.…
The development of epitaxy techniques for localized growth of crystalline silicon nanofilms and nanostructures has been crucial to recent advances in electronics and photonics. A precise definition of the crystal growth location, however,…
Double-diffusive instabilities are often invoked to explain enhanced transport in stably-stratified fluids. The most-studied natural manifestation of this process, fingering convection, commonly occurs in the ocean's thermocline and…
We investigate the nonlinear evolution of the Bales-Zangwill instability, responsible for the meandering of atomic steps on a growing vicinal surface. We develop an asymptotic method to derive, in the continuous limit, an evolution equation…
The meander instability of a vicinal surface growing under step flow conditions is studied within a solid-on-solid model. In the absence of edge diffusion the selected meander wavelength agrees quantitatively with the continuum linear…
In low-temperature pulsed growth two-dimensional islands form and coarsen into ~10 nm features. The islands produce well-defined displaced x-ray diffraction peaks due to relaxation of anisotropic surface stress of the (2x1) reconstruction…
Self-assembled Ge islands were grown on stripe-patterned Si (001) substrates by solid source molecular beam epitaxy. The surface morphology obtained by atomic force microscopy (AFM) and cross-sectional transmission electron microscopy…
The atomic structure of Si tetramers that form on the Si$(111)\textrm{-}7\times7$ surface during homoepitaxy, is investigated by means of first principles calculations with the currently available atomistic model as starting point. It is…
We show theoretically that an imposed uniaxial anisotropy leads to new universality classes for the dynamics of active particles suspended in a viscous fluid. In the homogeneous state, their concentration relaxes superdiffusively, stirred…
We investigate island formation during heteroepitaxial growth using an atomistic model that incorporates deposition, activated diffusion and stress relaxation. For high misfit the system naturally evolves into a state characterized by a…
In a binary fluid mixture, the concentration gradient of a heavier molecular solute leads to a diffusive flux of solvent and solute to achieve thermodynamic equilibrium. If the solute concentration decreases with height, the system is…
The effect of impurities on epitaxial growth in the submonolayer regime is studied using kinetic Monte Carlo simulations of a two-species solid-on-solid growth model. Both species are mobile, and attractive interactions among adatoms and…
The unique electronic properties of graphene offer the possibility that it could replace silicon when microelectronics evolves to nanoelectronics. Graphene grown epitaxially on silicon carbide is particularly attractive in this regard…
The growth of crystal surfaces, under non-equilibrium conditions, involves the displacement of mono-atomic steps by atom diffusion and atom incorporations into steps. The time-evolution of the growing crystal surface is thus governed by a…
Spontaneous demixing in active matter is a ubiquitous phenomenon that is crucial for numerous living processes ranging from bacterial swarming to sorting of cells in dense tissues. Here, we systematically investigate the effect of spatially…
Using low energy electron microscopy we observe that Pd deposited on Ru only attaches to small sections of the atomic step edges surrounding Pd islands. This causes a novel epitaxial growth mode in which islands advance in a snakelike…
We present a combined experimental and theoretical study of submonolayer heteroepitaxial growth of Ag on Si(111)-7x7 at temperatures from 420 K to 550 K when Ag atoms can easily diffuse on the surface and the reconstruction 7x7 remains…
By carrying out Monte Carlo simulations based on the two-species atomic-scale kinetic growth model of GaAs(001) homoepitaxy and comparing the results with scanning tunneling microscope images, we show that initial growing islands undergo…
We study statistical scale invariance and dynamic scaling in a simple solid-on-solid 2+1 - dimensional limited mobility discrete model of nonequilibrium surface growth, which we believe should describe the low temperature kinetic roughening…