Related papers: Thermal correction to resistivity in dilute 2D sys…
Recent thermodynamic measurements on two-dimensional (2D) electron systems have found diverging behavior in the magnetic susceptibility and appearance of ferromagnetism with decreasing electron density. The critical densities for these…
We revisited the influence of electron-electron scattering on the resistivity of a two-dimensional system with linear spectrum. In conventional systems with parabolic spectrum, where Umklapp scattering is either prohibited or ineffective…
We performed the angle dependent magnetoresistance (MR), Hall effect measurements, the temperature dependent magneto-thermoelectric power (TEP) S(T) measurements, and the first-principles calculations to study the electronic properties of…
Deviation from perfect conical dispersion in Dirac materials, such as the presence of mass or tilting, enhances control and directionality of electronic transport. To identify these signatures, we analyze the thermal derivative spectra of…
We demonstrate a universal scaling form of longitudinal resistance in the quantum critical region of metal-insulator transitions, based on numerical results of three-dimensional Anderson transitions (with and without magnetic field),…
We have studied the metallic behaviour in low density GaAs hole systems, and Si electron systems, close to the apparent two-dimensional metal-insulator transition. Two observations suggest a semi-classical origin for the metallic-like…
Second order perturbative corrections to electron wavefunction are calculated here at generalized temperature, for the first time. This calculation is important to prove the renormalizeability of QED through order by order cancellation of…
We have studied the temperature dependence of resistivity, $\rho$, for a two-dimensional electron system in silicon at low electron densities, $n_s\sim10^{11}$ cm$^{-2}$, near the metal/insulator transition. The resistivity was empirically…
We calculate the electrical resistivity of a two-dimensional electron gas that results from two-particle collisions and strong Rashba spin-orbit coupling. In the absence of impurities, two-particle collisions do not contribute to…
A flat mounting unit with electronically variable thermal resistance [1] has been presented in the last year [2]. The design was based on a Peltier cell and the appropriate control electronics and software. The device is devoted especially…
We have calculated the density-density (Lindhard) response function of a homogeneous two-dimensional (2D) hole gas in the static (omega=0) limit. The bulk valence-band structure comprising heavy-hole (HH) and light-hole (LH) states is…
The resistivity for an extended two channel Anderson model is calculated. When the temperature decreases, it decreases logarithmically, and has T^1/2 anomaly at very low temperatures, as seen in some dilute U alloys. The single-particle and…
Using the Drude-Boltzmann semiclassical transport theory, we calculate the weak-field Hall resistance of a two-dimensional system at low densities and temperatures, assuming carrier scattering by screened random charged impurity centers.…
We present a study of the compressibility, K, of a two-dimensional hole system which exhibits a metal-insulator phase transition at zero magnetic field. It has been observed that dK/dp changes sign at the critical density for the…
This paper reports thermopower and conductivity measurements through the metal-insulator transition for 2-dimensional electron gases in high mobility Si-MOSFETs. At low temperatures both thermopower and conductivity show critical behaviour…
The tunneling between two parallel two-dimensional electron gases has been investigated as a function of temperature $T$, carrier density $n$, and the applied perpendicular magnetic field $B$. In zero magnetic field the equilibrium resonant…
This letter reports thermopower and conductivity measurements through the metal-insulator transition for 2-dimensional electron gases in high mobility Si-MOSFET's. At low temperatures both thermopower and conductivity show critical behavior…
We have made quantitative measurements of the spin polarization of two-dimensional (2D) GaAs (100) electrons and GaAs (311)A holes, as a function of an in-plane magnetic field. The functional form of the in-plane magnetoresistance is shown…
Two phenomena have been recently observed in high-mobility Si MOS structures: (1) strong enhancement of the metallic conduction at low temperatures, T < 2K, and (2) the scaling behavior of the temperature and electric field dependences of…
The Hall conductivity and resistivity of strongly localized electrons at low temperatures and at small magnetic fields are obtained. It is found that the results depend on whether the conductivity or the resistivity tensors are averaged to…