Related papers: Spin injection into a ballistic semiconductor micr…
Generation of spin imbalance in nonmagnetic semiconductors is crucial for the functioning of many spintronic devices. An attractive design of spin injectors into semiconductors is based on a spin pumping from a precessing ferromagnet,…
We have measured the transport properties of Ferromagnet - Superconductor nanostructures, where two superconducting aluminum (Al) electrodes are connected through two ferromagnetic iron (Fe) ellipsoids in parallel. We find that, below the…
Altermagnet is an emerging antiferromagnetic material subclass that exhibits spin-splitting in momentum space without net global magnetization and spin-orbit-coupling effect. In this work, we develop a model of thermal charge injection…
An interacting electron liquid in two (2D) and three (3D) dimensions may undergo a paramagnetic-to-ferromagnetic quantum spin polarization transition at zero applied magnetic field, driven entirely by exchange interactions, as the system…
We show theoretically that the magnetic ions, randomly distributed in a two-dimensional (2D) semiconductor system, can generate a ferromagnetic long-range order via the RKKY interaction. The main physical reason is the discrete (rather than…
Carrier-induced ferromagnetism has been observed in several (III,Mn)V semiconductors. We review the theoretical picture of these ferromagnetic semiconductors that emerges from a model with kinetic-exchange coupling between localized Mn…
Scheme and principle of operation of a spin gain transistor are proposed: a large unmagnetized current creates density sufficient for the ferromagnetic transition; a small magnetized current initiates spontaneous magnetization; large…
Spin-orbit interaction couples electron spins to electric fields and allows electrical monitoring of electron spins and electrical detection of spin dynamics. Competing mechanisms of spin-orbit interaction are compared, and optimal…
A magnetic tunnel junctions composed of room temperature ferromagnetic semiconductor rutile Ti1-xCoxO2-d and ferromagnetic metal Fe0.1Co0.9 separated by AlOx barrier showed positive tunneling magnetoresistance (TMR) with a ratio of ~11 % at…
We studied the spin injection in a NiFe(Py)/Si system using broadband ferromagnetic resonance spectroscopy. The Gilbert damping parameter of the Py layer on top of the Si channel was determined as a function of the Si doping concentration…
The spin dynamics of photoexcited carriers in semiconductors in contact with a ferromagnet is treated theoretically and compared with time-dependent Faraday rotation experiments. The long time response of the system is found to be governed…
Spin injection and detection in silicon is a difficult problem, in part because the weak spin-orbit coupling and indirect gap preclude using standard optical techniques. We propose two ways to overcome this difficulty, and illustrate their…
An ensemble Monte Carlo method is used to study the spin injection through a ferromagnet-semiconductor junction where a Schottky barrier is formed. It is shown that the Schottky-barrier-induced electric field which is confined in the…
We consider a mixture of spin-1/2 bosons and fermions, where only the bosons are subjected to the spin-orbit coupling induced by Raman beams. The fermions, although not directly coupled to the Raman lasers, acquire an effective spin-orbit…
Results of theoretical study of spin-polarized tunneling in ferromagnet/superconductor junctions are presented. Spin and charge currents are calculated as a function of applied voltage and spin polarization in a ferromagnet. The model takes…
A ring structure fabricated from GaAs is used to achieve interference of the net spin polarization of conduction band electrons. Optically polarized spins are split into two packets by passing through two arms of the ring in the diffusive…
The optical injection of charge and spin currents are investigated in Ge$_{1-x}$Sn$_{x}$ semiconductors as a function of Sn content. These emerging silicon-compatible materials enable the modulation of these processes across the entire…
Starting from microscopic and symmetry considerations, we derive the Hamiltonian describing the exchange interaction between the localized Mn spins and the valence band holes in $Ga_{1-x}Mn_x As$. We find that due to the strong spin-orbit…
Monolayer graphene with an energy gap presents a pseudospin symmetry broken ferromagnet with a perpendicular pseudomagnetization whose direction is switched by altering the type of doping between n and p. We demonstrate an electrical…
We present first-principles calculations of ballistic spin injection in Fe/GaAs and Fe/ZnSe junctions with orientation (001), (111), and (110). We find that the symmetry mismatch of the Fe minority-spin states with the semiconductor…