Related papers: Spontaneous spin polarized tunneling current throu…
It has been shown that tunneling of spin-polarized electrons through a semiconductor barrier is accompanied by generation of an electric current in the plane of the interfaces. The direction of this interface current is determined by the…
We develop a theoretical description of transport through quantum dots connected to reservoirs via spin-polarized ballistic contacts. Rate equations account for spin accumulation inside the dot, electron-electron interactions, and…
We study spin-dependent transport through a quantum nanostructure composed of a quantum dot (QD) surrounded by a quantum nanoring. The nanostructure is side-attached to source and drain electrodes and we assume that the confining potential…
We study current fluctuations in an interacting three-terminal quantum dot with ferromagnetic leads. For appropriately polarized contacts, the transport through the dot is governed by a novel dynamical spin blockade, i.e., a spin-dependent…
We study the spin and charge dynamics of electrons in n-doped II--VI semiconductor multiple quantum wells when one or more quantum wells are doped with Mn. The interplay between strongly nonlinear inter-well charge transport and the large…
Studies of spin manipulation in semiconductors has benefited from the possibility to grow these materials in high quality on top of optically active III-V systems. The induced electroluminescence in these layered semiconductor…
A scheme for a spin polarization direction switch is investigated by studying the spin-dependent electron transport of an asymmetrical quantum wire (QW) with Rashba spin-orbit coupling (SOC). It is found that the magnitude of the…
We consider electron transport along a single-mode channel which is in contact, via tunnel junctions in its walls, with two quantum dots. Electron tunneling to and from the dots contributes to the electron backscattering, and thus modifies…
Recent demonstrations using electron spins stored in quantum dots array as qubits are promising for developing a scalable quantum computing platform. An ongoing effort is therefore aiming at the precise control of the quantum dots…
Electrons confined in semiconductor quantum dot arrays have both charge and spin degrees of freedom. The spin provides a well-controllable and long-lived qubit implementation. The charge configuration in the dot array is influenced by…
Quantum spin Hall insulators, recently realized in HgTe/(Hg,Cd)Te quantum wells, support topologically protected, linearly dispersing edge states with spin-momentum locking. A local magnetic exchange field can open a gap for the edge…
We propose a new device to create a tunable all-electric spin polarizer: a quantum point contact (QPC) with four gates -- two in-plane side gates in series. The first pair of gates, near the source, is asymmetrically biased to create spin…
For a double quantum dot system in a parallel geometry, we demonstrate that by combining the effects of a flux and driving an electrical current through the structure, the spin correlations between electrons localized in the dots can be…
We propose a scheme to generate quantum spin current via optical dipole transition process. By coupling a three-level system based on the spin states of charged particles (electrons or holes in semiconductor) to the angular momentum states…
We present a novel scheme for performing a conditional phase gate between two spin qubits in adjacent semiconductor quantum dots through delocalized single exciton states, formed through the inter-dot Foerster interaction. We consider two…
We propose a spin valve device based on the interplay of a modulated spin-orbit interaction and a uniform external magnetic field acting on a quantum wire. Half-metal phases, where electrons with only a selected spin polarization exhibit…
We present a theoretical analysis of the nonlinear bias and temperature dependence of current-voltage characteristics of a spin-valve device which is formed by connecting a quantum dot to two ferromagnetic electrodes whose magnetic moments…
We exploit hyperfine interactions in a single Mn-ion confined in a quantum dot (QD) to create a qudit, i.e. a multi-level quantum-bit system, with well defined, addressable and robust set of spin states for the realization of universal…
We consider a quantum dot attached to leads in the Coulomb blockade regime which has a spin 1/2 ground state. We show that by applying an ESR field to the dot-spin the stationary current in the sequential tunneling regime exhibits a…
We investigate coherent control of a single electron trapped in a semiconductor quantum dot. Control is enabled with a strong laser field detuned with respect to the electron light-hole optical transitions. For a realistic experimental…