Related papers: Magnetic Interactions and Transport in (Ga,Cr)As

For the first time magnetrotransport of the ferromagnetic high-pressure phases of (GaSb)$_2$M (M=Cr,Mn) was measured. It was found that the main component of magnetotransport in these phases is negative and its amplitude is increasing with…

We have grown the ferromagnetic semiconductor GaMnAs containing up to 10% Mn by migration enhanced epitaxy at a substrate temperature of 150^oC. The alternate supply of As2 molecules and Ga and Mn atoms made it possible to grow single…

Experimental investigations of diluted magnetic semiconductors indicate a strong relation between Curie temperature and conductivity. Both quantities depend non trivially on the concentration of magnetic impurities, the carrier density, and…

Based on first-principles electron structure calculations and employing the frozen-magnon approximation we study the exchange interactions in a series of transition-metal binary alloys crystallizing in the zinc-blende structure and…

\b{eta}-Mn-type CoxZnyMnz (x + y + z = 20) alloys have recently attracted increasing attention as a new class of chiral magnets with skyrmions at and above room temperature. However, experimental studies on the transport properties of this…

We report on a monotonic reduction of Curie temperature in dilute ferromagnetic semiconductor (Ga,Mn)As upon a well controlled chemical-etching/oxidizing thinning from 15 nm down to complete removal of the ferro- magnetic response. The…

It is demonstrated by SQUID magnetization measurements that (Ga,Mn)As films can exhibit rich characteristics of magnetic anisotropy depending not only to the epitaxial strain but being strongly influenced by the hole and Mn concentration,…

We study the dc transport properties of (Ga,Mn)As diluted magnetic semiconductors with Mn concentration varying from 1.5% to 8%. Both diagonal and Hall components of the conductivity tensor are strongly sensitive to the magnetic state of…

Magneto-transport measurements of ferromagnetic MnAs epilayers grown by molecular beam epitaxy reveal the presence of both positive and negative charge carriers. Electrical transport at high temperatures is dominated by holes, and at low…

Magnetization (M) and magnetoresistance (MR) measurements on polycrystalline R2Mn3Si5 (R = Tb, Dy and Ho) compounds (tetragonal, space group P4/mnc) have been carried out in the temperature range of 2 K-300 K, in various applied fields.…

A new type of (Ga,Mn)As microstructures with laterally confined electronic and magnetic properties has been realized by growing (Ga,Mn)As films on [1-10]-oriented ridge structures with (113)A sidewalls and (001) top layers prepared on…

The ruthenium content of half-metallic Mn$_2$Ru$_x$Ga thin films, with a biaxially-strained inverse Heusler structure, controls the ferrimagnetism that determines their magnetic and electronic properties. An extensive study of…

The electrical resistivity, anisotropic magnetoresistance (AMR), and anomalous Hall effect of ferromagnetic Mn5Ge3, Mn5Ge3C0.8, and Mn5Si3C0.8 thin films has been investigated. The data show a behavior characteristic for a ferromagnetic…

Thin films of the ferromagnet Fe$_2$Ge were grown via molecular beam epitaxy, and their electrical and magneto-transport properties measured for the first time. X-ray diffraction and vibrating sample magnetometry measurements confirmed the…

It is demonstrated by SQUID measurements that (Ga,Mn)As films can exhibit perpendicular easy axis at low temperatures, even under compressive strain, provided that the hole concentration is sufficiently low. In such films, the easy axis…

A new mechanism is proposed to explain the colossal magnetoresistance and related phenomena. Moving electrons accompanied by Jahn-Teller phonon and spin-wave clouds may form composite polarons in ferromagnetic narrow-band manganites. The…

Magnetic and transport properties of polycrystalline Gd$_{1-x}$Sr$_x$CoO$_{3}$ ($x$= 0.10-0.70) are investigated systemically. Cluster-glass magnetism for $x \leq$ 0.45 and long-range ferromagnetic order in higher doping level are observed.…

We present a study of the magnetoresistance and Hall effect in the narrow-gap semiconductor FeSb2 at low temperatures. Both the electrical and Hall resistivities show unusual magnetic field dependence in the low-temperature range where a…

We present magnetization, specific heat, resistivity, and Hall effect measurements on the cubic B20 phase of MnGe and CoGe and compare to measurements of isostructural FeGe and electronic structure calculations. In MnGe, we observe a…

Magnetic properties of Ga$_{1-x}$Mn$_x$N are studied theoretically by employing a tight binding approach to determine exchange integrals $J_{ij}$ characterizing the coupling between Mn spin pairs located at distances $R_{ij}$ up to the 16th…