Related papers: Spin relaxation and antisymmetric exchange in n-do…
Time resolved measurements of magnetization in n-GaAs have revealed a rich array of spin decoherence processes, and have shown that fairly long lifetimes (\sim 100 ns) can be achieved under certain circumstances. In time-resolved Faraday…
The mechanisms that determine spin relaxation times of localized electrons in impurity bands of n-type semiconductors are considered theoretically and compared with available experimental data. The relaxation time of the non-equilibrium…
The spin relaxation time due to the electron-acoustic phonon scattering in GaAs quantum dots is studied after the exact diagonalization of the electron Hamiltonian with the spin-orbit coupling. Different effects such as the magnetic field,…
Low-temperature electron spin relaxation is studied by the optical orientation method in bulk n-GaAs with donor concentrations from 10^14 cm^{-3} to 5x10^17 cm^{-3}. A peculiarity related to the metal-to-insulator transition (MIT) is…
The spin-orbit interaction in semiconductors is shown to result in an anisotropic contribution into the exchange Hamiltonian of a pair of localized conduction-band electrons. The anisotropic exchange interaction exists in semiconductor…
The mechanisms for spin relaxation in semiconductors are reviewed, and the mechanism prevalent in p-doped semiconductors, namely spin relaxation due to the electron-hole exchange interaction, is presented in some depth. It is shown that the…
Spin relaxation time of conduction electrons through the Elliot-Yafet, D'yakonov-Perel and Bir-Aronov-Pikus mechanisms is calculated theoretically for bulk GaAs, GaSb, InAs and InSb of both $n$- and $p$-type. Relative importance of each…
We report a large and unexpected suppression of the free electron spin relaxation in lightly-doped n-GaAs bulk crystals. The spin relaxation rate shows weak mobility dependence and saturates at a level 30 times less then that predicted by…
The D'yakonov-Perel' spin relaxation mechanism in n-doped GaAs/AlGaAs quantum wells (QWs) has been studied both theoretically and experimentally. The temperature dependence of the spin relaxation time has been calculated for arbitrary…
Anisotropic exchange couplings, such as the Dzyaloshinskii-Moriya interaction (DMI), have played a vital role in the formation and dynamics of spin textures. This work predicts an anisotropic conduction electron spin density in metals with…
We study spin relaxation in n-type bulk GaAs, due to the Dyakonov--Perel mechanism, using ensemble Monte Carlo methods. Our results confirm that spin relaxation time increases with the electronic density in the regime of moderate electronic…
Spin relaxation is investigated theoretically in two-dimensional systems. Various semiconductor structures of both n- and p-types are studied in detail. The most important spin relaxation mechanisms are considered. The spin relaxation times…
We report a surprisingly long spin relaxation time of electrons in Mn-doped p-GaAs. The spin relaxation time scales with the optical pumping and increases from 12 ns in the dark to 160 ns upon saturation. This behavior is associated with…
Electron spin relaxation induced by phonon-mediated s-d exchange interaction in a II-VI diluted magnetic semiconductor quantum dot is investigated theoretically. The electron-acoustic phonon interaction due to piezoelectric coupling and…
The D'yakonov-Perel' spin relaxation induced by the spin-orbit interaction is examined in disordered two-dimensional electron gas. It is shown that, because of the electron-electron interactions different spin relaxation rates can be…
We combine extensive precision measurements of the optically detected spin dynamics and magneto-transport measurements in a contiguous set of n-doped bulk GaAs structures in order to unambiguously unravel the intriguing but complex…
Electron spin dynamics are studied in Ga-doped ZnO single crystals by time-resolved Faraday and Kerr rotation spectroscopies. Long-lived spin coherence with two dephasing processes is discovered where the characteristic time is up to 5.2 ns…
We investigate the spin relaxation and spin dephasing of $n$-type GaAs quantum wells. We obtain the spin relaxation time $T_1$, the spin dephasing time $T_2$ and the ensemble spin dephasing time $T_2^{\ast}$ by solving the full microscopic…
We identify the Dresselhaus spin-orbit coupling as the source of the dominant spin-relaxation mechanism in the impurity band of doped semiconductors. The Dresselhaus-type (i.e. allowed by bulk-inversion asymmetry) hopping terms are derived…
We propose a mechanism to describe spin relaxation in n-doped III-V semiconductors close to the Mott metal-insulator transition. Taking into account the spin-orbit interaction induced spin admixture in the hydrogenic donor states, we build…