Related papers: Quantum spin field effect transistor
We consider the possibility to employ a quantum wire realized in a two-dimensional electron gas (2DEG) as a spin ratchet. We show that a net spin current without accompanying net charge transport can be induced in the nonlinear regime by an…
A longitudinal electric field is used to control the transit time (through an undoped silicon vertical channel) of spin-polarized electrons precessing in a perpendicular magnetic field. Since an applied voltage determines the final spin…
Spin Hall Effect is relativistic quantum mechanical effect which enables non-magnetic materials show magnetic phenomena without the application of a magnetic field. With spin Hall Effect, one can realize spintronics devices operating purely…
A bilayer graphene based electrostatically doped tunnel field-effect transistor (BED-TFET) is proposed in this work. Unlike graphene nanoribbon TFETs in which the edge states deteriorate the OFF-state performance, BED-TFETs operate based on…
A spin metal-oxide-semiconductor field-effect-transistor (spin MOSFET), which combines a Schottky-barrier MOSFET with ferromagnetic source and drain contacts, is a promising device for spintronic logic. Previous simulation studies predict…
Spin transfer - the transfer of angular momentum from spin-polarized electrical current to magnetic materials - has been extensively researched as an efficient mechanism for the electronic manipulation of the static and dynamic states in…
A field-effect transistor that employs a perovskite-type SrTiO3 single crystal as the semiconducting channel is revealed to function as n-type accumulation-mode device with characteristics similar to that of organic FET's. The device was…
We propose and analyse a quantum thermal field-effect transistor (qtFET) composed of left-qubit, middle-qutrit, and right-qubit subsystems. In this architecture, the left qubit is coupled to the middle qutrit, which in turn interacts with…
We report on an unconventional $macroscopic$ field effect transistor composed of electrons floating above the surface of superfluid helium. With this device unique transport regimes are realized in which the charge density of the electron…
We fabricate a vertical spin metal-oxide-semiconductor field-effect transistor (spin-MOSFET) structure, which is composed of an epitaxial single-crystal heterostructure with a ferromagnetic-semiconductor GaMnAs source/drain, and investigate…
Spintronics relies on the ability to transport and utilize the spin properties of an electron rather than its charge. We describe a spin rachet at the single-electron level that produces spin currents with no net bias or charge transport.…
Current induced spin-orbit magnetic fields (iSOFs), arising either in single-crystalline ferromagnets with broken inversion symmetry1,2 or in non-magnetic metal/ferromagnetic metal bilayers3,4, can produce spin-orbit torques which act on a…
Metallic nanoparticles offer possibilities to build basic electric devices with new functionality and improved performance. Due to the small volume and the resulting low self-capacitance, each single nanoparticle exhibits a high charging…
We presents a data-calibrated compact model of carbon nanotube (CNT) field-effect transistors (CNFETs) based on the virtual-source (VS) approach, describing the intrinsic current-voltage and charge-voltage characteristics. The features of…
We theoretically predict that a pure steady state spin-current without charge-current can induce an electric field. A formula for the induced electric field is derived and we investigate its characteristics. Conversely, a moving spin is…
We report on the injection of quantized pure spin current into quantum conductors. In particular, we propose an on demand single spin source generated by periodically varying the gate voltages of two quantum dots that are connected to a two…
We report a new class of large-gap quantum spin Hall insulators in two-dimensional transition metal dichalcogenides, namely, MX$_2$ with M=(Mo, W) and X=(S, Se, and Te), whose topological electronic properties are highly tunable by external…
It is well known that conventional Field Effect Transistors (FET's) require a change in the channel potential of at least 60 mV at 300K to effect a change in the current by a factor of ten, and this minimum subthreshold slope S puts a lower…
Spin-gapless semiconductors (SGSs) are a promising class of materials for spintronic applications, enabling functions beyond conventional electronics. This study introduces a novel design for multifunctional spintronic field-effect…
The spin-orbit coupling systems with a zero magnetic field is studied under the equilibrium situation, {\it i.e.}, without a voltage bias. A persistent spin current is predicted to exist under most circumstances, although the persistent…