Related papers: High-performance planar light-emitting diode
Dilute arrays of GaAs/AlGaAs modulation-doped quantum dots (QDs) fabricated by electron-beam lithography and low impact reactive-ion etching exhibit highly homogeneous luminescence. Single quantum dots display spectral emission with peak…
Detectors that can simultaneously provide fine time and spatial resolution have attracted wide-spread interest for applications in several fields such as high-energy and nuclear physics as well as in low-energy electron detection, photon…
Lead-halide perovskites have been attracting attention for potential use in solid-state lighting. Following the footsteps of solar cells, the field of perovskite light-emitting diodes (PeLEDs) has been growing rapidly. Their application…
Unbalanced charge injection is deleterious for the performance of colloidal quantum dot (CQD) light emitting diodes (LEDs) as it deteriorates the quantum efficiency (QE), brightness and operational lifetime. CQD LEDs emitting in the…
Light-emitting diodes based on perovskite nanocrystals (PNCs-LEDs) have gained great interest for next-generation display and lighting technologies prized for their color purity, high brightness and luminous efficiency approaching the…
We consider theoretically the realization of a tunable terahertz light emitting diode from a quantum well with dressed electrons placed in a highly doped p-n junction. In the considered system the strong resonant dressing field forms…
Remarkable systems have been reported recently using the polylithic integration of semiconductor optoelectronic devices and plasmonic materials exhibiting epsilon-near-zero (ENZ) and negative permittivity. In traditional noble metals, the…
Dual-phase liquid xenon time projection chambers are the core detector elements of many experiments that conduct searches for Dark Matter and rare events, as well as in neutrino and high-energy physics. As part of this detector technology,…
We demonstrate simple optical frequency combs based on semiconductor quantum well laser diodes. The frequency comb spectrum can be tailored by choice of material properties and quantum-well widths, providing spectral flexibility. Finally,…
In this work we study a possibility of waveguide fabrication on the basis of active quantum wells in semiconductor lasers. The efficiency of such a waveguide for an InP structure with In0.53Ga0.47As quantum wells is demonstrated…
Photons, electrons, and their interplay are at the heart of photonic devices and modern instruments for ultrafast science [1-10]. Nowadays, electron beams of the highest intensity and brightness are created by photoemission with short laser…
In this Letter, we report the observation of electroluminescence (EL) at around 866 nm from n-i-n unipolar (electron-transporting) III-V GaAs nanoLEDs. The devices consist of nanopillars with top diameter of 166 nm, arranged in a 10x10…
A light emitting diode (LED) pulser has been developed that can be used for tests or calibration of timing and amplitude sensitivity of particle physics detectors. A comparative study is performed on the components and pulser output…
Mid and deep ultraviolet (UV) laser diodes remain among the least explored devices in semiconductor optoelectronics, despite their importance for spectroscopy, biochemical sensing, disinfection, and emerging quantum photonics. Here, we…
Plasmons in heavily doped semiconductor layers are optically active excitations with sharp resonances in the 5-15 um wavelength region set by the doping level and the effective mass. Here we demonstrate that volume plasmons can form in…
Organic light-emitting diodes (OLEDs) are central to modern display technologies and are promising candidates for low-cost energy-efficient lighting. Their performance is determined by numerous, intricate fabrication parameters, but not…
We report the observation of a Purcell enhancement in the electroluminescence decay rate of a single quantum dot, embedded in a microcavity light-emitting-diode structure. Lateral confinement of the optical mode was achieved using an…
The influence of the growth conditions as well as the device design on the device performance of (GaIn)As/Ga(AsSb)/(GaIn)As "W"-quantum well lasers is investigated. To this purpose, the epitaxy process is scaled to full two inch substrates…
Colloidal quantum dots are promising next-generation phosphors to enhance the color rendition of light-emitting devices (LEDs) while minimizing the brightness drop. In order to exploit the beneficial tunability of quantum dots for highly…
We present a comprehensive theory and an easy to follow method for the design and construction of a wideband homodyne detector for time-domain quantum measurements. We show how one can evaluate the performance of a detector in a specific…